參數(shù)資料
型號: AP4409GEM
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: P-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: 14.5 A, 35 V, 0.0075 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SOP-8
文件頁數(shù): 3/4頁
文件大?。?/td> 89K
代理商: AP4409GEM
AP4409GEM
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
0
10
20
30
40
50
0
1
2
3
4
-V
DS
, Drain-to-Source Voltage (V)
-
D
T
A
=25
o
C
-10V
-5.0V
-4.5V
-3.0V
V
G
=-2.5V
0
10
20
30
40
50
0
1
2
3
4
-V
DS
, Drain-to-Source Voltage (V)
-
D
T
A
=150
o
C
-10V
-5.0V
-4.5V
-3.0V
V
G
=-2.5V
6
11
16
21
26
2
4
6
8
10
-V
GS
, Gate-to-Source Voltage (V)
R
D
Ω
)
I
D
=-7A
T
A
=25
0.6
1.0
1.4
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
D
I
D
=-7A
V
G
=-10V
0.2
0.6
1.0
1.4
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
G
0
2
4
6
8
10
12
14
0
0.2
-V
SD
, Source-to-Drain Voltage (V)
0.4
0.6
0.8
1
1.2
-
S
(
T
j
=25
o
C
T
j
=150
o
C
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