參數(shù)資料
型號: AP4409GEM
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: P-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: 14.5 A, 35 V, 0.0075 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SOP-8
文件頁數(shù): 1/4頁
文件大?。?/td> 89K
代理商: AP4409GEM
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
BV
DSS
R
DS(ON)
I
D
-35V
7.5m
Ω
-14.5A
Low On-resistance
Fast Switching Characteristic
RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25
I
D
@T
A
=70
I
DM
P
D
@T
A
=25
Units
V
V
A
A
A
W
W/
T
STG
T
J
Symbol
Value
50
Unit
/W
Rthj-a
Thermal Resistance Junction-ambient
3a
Max
Data and specifications subject to change without notice
Pb Free Plating Product
Thermal Data
Parameter
Total Power Dissipation
Linear Derating Factor
2.5
0.02
-55 to 150
-55 to 150
Operating Junction Temperature Range
Storage Temperature Range
Continuous Drain Current
3a
Pulsed Drain Current
1
-12
-50
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3a
20032
7
06
3
-1/4
AP4409GEM
Rating
-35
±20
-14.5
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such as
DC/DC converters.
SSS
G
D
DD
D
SO-8
G
D
S
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