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參數(shù)資料
| 型號(hào)： | AP4407S |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE |
| 中文描述： | 50 A, 30 V, 0.014 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263, 3 PIN |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大小： | 82K |
| 代理商： | AP4407S |
AP4407S/P
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
t
d(on)
t
r
t
d(off)
t
f
V
DS
90%
V
GS
10%
Q
V
G
-4.5V
Q
GS
Q
GD
Q
G
Charge
100
1000
10000
1
5
9
13
17
21
25
29
-V
DS
, Drain-to-Source Voltage (V)
C
f=1.0MHz
C
iss
C
oss
C
rss
0
2
4
6
8
10
12
14
0
20
40
60
80
Q
G
, Total Gate Charge (nC)
-
G
I
D
= -24A
V
DS
= -24V
1
10
100
1000
0.1
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-
D
(
T
C
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
DC
0.01
0.00001
0.1
1
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
t
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
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|---|---|
| AP4409AGEM | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP4409GEM | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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