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參數(shù)資料
| 型號： | AP4407GR |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | P溝道增強型功率MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 81K |
| 代理商： | AP4407GR |
AP4407GR
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-30
-
-
V
Δ
B
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=-1mA
Static Drain-Source On-Resistance
2
-
-0.01
-
V/
℃
R
DS(ON)
V
GS
=-10V, I
D
=-24A
-
-
14
m
Ω
V
GS
=-4.5V, I
D
=-16A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-24A
V
DS
=-30V, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
GS
= ±25V
I
D
=-24A
V
DS
=-24V
V
GS
=-4.5V
V
DS
=-15V
I
D
=-24A
R
G
=3.3
Ω
,
V
GS
=-10V
R
D
=0.63
Ω
V
GS
=0V
V
DS
=-25V
f=1.0MHz
-
-
23
m
Ω
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-3
-
-1
-25
±
100
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
36
-
-
-
35
5
26
11
64
63
100
2120
630
550
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
60
-
-
-
-
-
-
3390
-
-
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Test Conditions
Min.
-
-
-
Typ.
-
39
38
Max.
-1.2
-
-
Units
V
ns
nC
Forward On Voltage
2
Reverse Recovery Time
2
I
S
=-24A, V
GS
=0V
I
S
=-24A, V
GS
=0V,
dI/dt=-100A/μs
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP4407M | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4407P | P-CHANNEL ENHANCEMENT MODE |
| AP4407S | P-CHANNEL ENHANCEMENT MODE |
| AP4409GEM | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4409GM | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP4407GS | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower On-resistance, Simple Drive Requirement |
| AP4407I | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
| AP4407I-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower On-resistance, Fast Switching Characteristic |
| AP4407M | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4407P | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
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