參數(shù)資料
型號： AP4232AGM
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 7.8 A, 30 V, 0.023 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, SOP-8
文件頁數(shù)： 4/5頁
文件大?。?/td> 178K
代理商： AP4232AGM
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP4232AGM
Q
VG
4.5V
QGS
QGD
QG
Charge
0
4
8
12
16
04
8
12
16
20
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS =15V
V DS =18 V
V DS =24V
I D =7 A
10
100
1000
1
5
9
131721
2529
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
10
100
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
ja
)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 135℃/W
t
T
0.02
0
10
20
30
40
50
02
46
8
V GS , Gate-to-Source Voltage (V)
I
D
,D
ra
in
C
u
rr
e
nt
(A
)
T j =150
o C
T j =25
o C
V DS =5V
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