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參數(shù)資料
| 型號： | AP4232AGM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 7.8 A, 30 V, 0.023 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 178K |
| 代理商： | AP4232AGM |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=7A
-
23
mΩ
VGS=4.5V, ID=5A
-
35
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=7A
-
7
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=30V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=24V, VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
±100
nA
Qg
Total Gate Charge
2
ID=7A
-
10
21
nC
Qgs
Gate-Source Charge
VDS=24V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
5.6
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
7.4
-
ns
tr
Rise Time
ID=1A
-
6.4
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
19
-
ns
tf
Fall Time
RD=15Ω
-
4.6
-
ns
Ciss
Input Capacitance
VGS=0V
-
620
1150
pF
Coss
Output Capacitance
VDS=25V
-
100
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
85
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=1.7A, VGS=0V
-
1.2
V
t
rr
Reverse Recovery Time
2
IS=7A, VGS=0V,
-
22
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
14
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
3.Surface mounted on 1 in
2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.
2
AP4232AGM
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