參數資料
型號: AP3402GEH
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: 38 A, 35 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數: 2/4頁
文件大?。?/td> 70K
代理商: AP3402GEH
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
35
-
-
V
ΔB
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
Static Drain-Source On-Resistance
2
-
0.03
-
V/
R
DS(ON)
V
GS
=10V, I
D
=25A
-
-
18
m
Ω
V
GS
=4.5V, I
D
=20A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=25A
V
DS
=30V, V
GS
=0V
V
DS
=24V ,V
GS
=0V
V
GS
=±20V
I
D
=25A
V
DS
=25V
V
GS
=4.5V
V
DS
=15V
I
D
=25A
R
G
=3.3
Ω,
V
GS
=10V
R
D
=0.6
Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
-
-
32
m
Ω
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3
-
1
25
±30
17
-
-
-
-
-
-
1520
-
-
3.8
V
S
uA
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
22
-
-
-
10.5
4
6
9
78
19
4
950
160
110
2.5
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ω
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Test Conditions
Min.
-
-
-
Typ.
-
22
10
Max.
1.2
-
-
Units
V
ns
nC
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
I
S
=25A, V
GS
=0V
I
S
=20A,
V
GS
=0
V
,
dI/dt=100A/μs
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
2/4
AP3402GEH/J
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