- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375345 > AP2302LMTR-E1 (BCD Semiconductor Manufacturing Limited) 2A DDR TERMINATION REGULATOR PDF資料下載
參數(shù)資料
| 型號： | AP2302LMTR-E1 |
| 廠商： | BCD Semiconductor Manufacturing Limited |
| 英文描述： | 2A DDR TERMINATION REGULATOR |
| 中文描述： | 甲DDR終端穩(wěn)壓器 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 139K |
| 代理商： | AP2302LMTR-E1 |
2A DDR TERMINATION REGULATOR AP2302L
Preliminary Datasheet
7
Nov. 2005 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
25
50
75
100
125
0.16
0.18
0.20
0.22
0.24
0.26
0.28
0.30
V
CNTL
=5V
V
REFEN
=1.0V
R
D
Ambient Temperature (
o
C)
V
IN
=0.9V
V
IN
=0.85V
V
IN
=0.8V
25
50
75
100
125
0.16
0.18
0.20
0.22
0.24
0.26
0.28
0.30
V
CNTL
=3.3V
V
REFEN
=1.0V
R
D
Ambient Temperature (
o
C)
V
IN
=0.9V
V
IN
=0.85V
V
IN
=0.8V
Typical Performance Characteristics (Continued)
Figure 10. R
DS(on)
vs. Ambient Temperature
Figure 11. R
DS(on)
vs. Ambient Temperature
Figure 8. 0.9V
TT
at 2A Transient Response
Figure 9. 1.25V
TT
at 2A Transient Response
Time (
μ
s)
Time (
μ
s)
O
V
20mV
-20mV
2A
-2A
20mV
-20mV
2A
-2A
O
V
O
O
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP28G45GEM | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP2N7002K | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP30G120W | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30N30W | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3302H | N-CHANNEL ENHANCEMENT MODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP2302M | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:3A DDR TERMINATION REGULATOR |
| AP2302M-E1 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:3A DDR TERMINATION REGULATOR |
| AP2302MTR | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:3A DDR TERMINATION REGULATOR |
| AP2302MTR-E1 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:3A DDR TERMINATION REGULATOR |
| AP2302N | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。