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參數(shù)資料
| 型號(hào)： | AP28G45GEM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| 中文描述： | 450 V, N-CHANNEL IGBT |
| 封裝： | LEAD FREE, SOP-8 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | AP28G45GEM |
Advanced Power
Electronics Corp.
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
▼
High Input Impedance
High Pick Current Capability
3.3V Gate Drive
▼
Strobe Flash Applications
V
CE
I
CP
▼
▼
Absolute Maximum Ratings
Symbol
V
CE
V
GE
I
GEP
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
I
GES
I
CES
V
CE(sat)
V
GE(th)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
Rth
JA
Thermal Resistance Junction-Ambient
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
3.8
-
74
8
34
20
100
400
3
3020
220
50
-
Max.
10
10
6
1
120
-
-
-
-
-
-
4830
-
-
50
Units
uA
uA
V
V
nC
nC
nC
ns
ns
ns
μ
s
pF
pF
pF
1
℃
/W
Notes:
1.Surface mounted on 1 in
2
copper pad of
FR4 board ; 125
℃
/W when mounted on Min. copper pad.
Data and specifications subject to change without notice
V
GE
=4.5V
V
CC
=200V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
f=1.0MHz
V
GE
=± 6V, V
CE
=0V
V
CE
=450V, V
GE
=0V
T
STG
T
J
Turn-off Delay Time
V
GE
=0V
V
CE
=25V
I
C
=15A
R
G
=10
Ω
V
GE
=5V
Rise Time
Gate-Collector Charge
Turn-on Delay Time
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Emitter Leakage Current
Collector-Emitter Leakage Current
A
W
V
GE
=3.3V, I
CP
=130A (Pulsed)
V
CE
=V
GE
, I
C
=250uA
I
C
=40A
V
CE
=360V
Test Conditions
AP28G45GEM
450V
130A
Rating
450
± 6
± 8
Collector-Emitter Voltage
Gate-Emitter Voltage
Units
V
V
V
130
2.5
Parameter
Storage Temperature Range
Operating Junction Temperature Range
Pulsed Collector Current, V
GE
@ 3.3V
Maximum Power Dissipation
Parameter
I
CP
P
D
@T
C
=25
℃
1
Pulsed Gate-Emitter Voltage
-55 to 150
-55 to 150
Pb Free Plating Product
201117031
℃
℃
G
C
E
E
E
E
G
C
C
C
C
SO-8
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