參數資料
型號： AP18P10GS
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 12 A, 100 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： ROHS COMPLIANT, TO-263, 3 PIN
文件頁數： 4/5頁
文件大?。?/td> 135K
代理商： AP18P10GS
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
AP18P10GS
Q
VG
-4.5V
QGS
QGD
QG
Charge
0
3
6
9
12
15
0
1020
3040
Q G , Total Gate Charge (nC)
-V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS = - 80 V
I D = - 8 A
10
100
1000
10000
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
1
10
100
0.1
1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
-I
D
(A
)
T C =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
0
2.5
5
7.5
10
12.5
15
02
46
-V GS , Gate-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T j =150
o C
T j =25
o C
V DS = -5V
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