- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄51257 > AP18P10GS (ADVANCED POWER ELECTRONICS CORP) 12 A, 100 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB PDF資料下載
參數(shù)資料
| 型號： | AP18P10GS |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 100 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | ROHS COMPLIANT, TO-263, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 135K |
| 代理商： | AP18P10GS |
AP18P10GS
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-1mA
-100
-
V
RDS(ON)
Static Drain-Source On-Resistance
3
VGS=-10V, ID=-8A
-
160
mΩ
VGS=-4.5V, ID=-6A
-
200
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS= -10V, ID= -8A
-
8
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=-100V, VGS=0V
-
-1
uA
Drain-Source Leakage Current (Tj=150
oC)
VDS=-80V, VGS=0V
-
-25
uA
IGSS
Gate-Source Leakage
VGS= ±20V
-
±100
nA
Qg
Total Gate Charge
3
ID=-8A
-
16
25.6
nC
Qgs
Gate-Source Charge
VDS=-80V
-
4.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
8.7
-
nC
td(on)
Turn-on Delay Time
3
VDS=-50V
-
9
-
ns
tr
Rise Time
ID=-8A
-
14
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
45
-
ns
tf
Fall Time
RD=6.25Ω
-40
-
ns
Ciss
Input Capacitance
VGS=0V
-
1590
2550
pF
Coss
Output Capacitance
VDS=-25V
-
110
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Rg
Gate Resistance
f=1.0MHz
-
8
12
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
3
IS=-12A, VGS=0V
-
-1.3
V
trr
Reverse Recovery Time
3
IS=-8A, VGS=0V,
-
49
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/s
-
110
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25
oC , V
DD=-50V , L=1.0mH , RG=25Ω.
3.Pulse test
THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT
OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
2/4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP18T10AGH-HF | 9 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP1F3P | 700 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| AP1A4A | 700 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| AP1F3P-AZ | 700 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| AP1A3M | 700 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP18SC | 制造商:Banner Engineering 功能描述:Aperture Kit, Includes: three round apertures, 0.5 mm 1.0 mm & 2.5 mm , For Opp |
| AP18SC-74361 | 制造商:Banner Engineering 功能描述:AP18SC-74361 NO APERTURES HOUSING O-RING LENS |
| AP18SCN | 制造商:Banner Engineering 功能描述:Aperture Kit, Includes: three round apertures, 0.5 mm 1.0 mm & 2.5 mm , For Opp |
| AP18SR | 制造商:Banner Engineering 功能描述:Aperture Kit, Includes: three rectangular apertures, 0.5 mm 1.0 mm & 2.5 mm , F |
| AP18T10AGH-HF-3TR | 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 100V 160MOHM TO-252 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 100V, 160MOHM, TO-252 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 100V, 160MOHM, TO-252, Transistor Polarity:N Channel, Continuous Drain Current Id:9A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.16ohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:28W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, NCH, 100V, 160MOHM, TO-252, Transistor Polarity:N Channel, Continuous Dr |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。