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參數(shù)資料
| 型號(hào)： | AO4932 |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 8000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | GREEN, SOIC-8 |
| 文件頁(yè)數(shù)： | 7/9頁(yè) |
| 文件大?。?/td> | 668K |
| 代理商： | AO4932 |
AO4932
FET2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
5
10
15
20
25
30
1
1.5
2
2.5
3
3.5
4
I D
(A
)
V
GS(Volts)
Figure 2: Transfer Characteristics (Note E)
10
15
20
25
30
0
5
10
15
20
R
D
S
(O
N
)
(m
)
I
D (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
N
o
rm
a
li
ze
d
O
n
-R
e
s
is
ta
n
c
e
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
V
GS=4.5V
I
D=4A
V
GS=10V
I
D=8A
25°C
125°C
V
DS=5V
V
GS=4.5V
V
GS=10V
0
5
10
15
20
25
30
0
1
2
3
4
5
I D
(A
)
V
DS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS=2.5V
3V
10V
3.5V
4V
5V
18
40
0
5
10
15
20
25
30
1
1.5
2
2.5
3
3.5
4
I D
(A
)
V
GS(Volts)
Figure 2: Transfer Characteristics (Note E)
10
15
20
25
30
0
5
10
15
20
R
D
S
(O
N
)
(m
)
I
D (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-I
S
(A
)
-V
SD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
N
o
rm
a
li
ze
d
O
n
-R
e
s
is
ta
n
c
e
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
V
GS=4.5V
I
D=4A
V
GS=10V
I
D=8A
10
15
20
25
30
35
40
2
4
6
8
10
R
D
S
(O
N
)
(m
)
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°C
125°C
V
DS=5V
V
GS=4.5V
V
GS=10V
I
D=8A
25°C
125°C
0
5
10
15
20
25
30
0
1
2
3
4
5
I D
(A
)
V
DS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS=2.5V
3V
10V
3.5V
4V
5V
Rev 3: Dec 2010
www.aosmd.com
Page 7 of 9
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