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參數(shù)資料
| 型號： | AO4932 |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 8000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | GREEN, SOIC-8 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 668K |
| 代理商： | AO4932 |
AO4932
Symbol
Min
Typ
Max
Units
BVDSS
30
V
DS=30V, VGS=0V
1
T
J=55°C
5
IGSS
10
A
VGS(th)
Gate Threshold Voltage
1.2
1.8
2.4
V
ID(ON)
40
A
15.5
19
T
J=125°C
21
25
18.6
23
m
gFS
30
S
VSD
0.75
1
V
IS
2.5
A
Ciss
600
740
888
pF
Coss
77
110
145
pF
Crss
50
82
115
pF
Rg
0.5
1.1
1.7
Qg(10V)
12
15
18
nC
Qg(4.5V)
6
7.5
9
nC
Qgs
2
2.5
3
nC
Qgd
2
3
5
nC
tD(on)
5
ns
tr
3.5
ns
Turn-On DelayTime
Turn-On Rise Time
VGS=10V, VDS=15V, RL=1.8,
V
GS=10V, VDS=5V
V
GS=10V, ID=8A
Gate-Body leakage current
SWITCHING PARAMETERS
Gate Drain Charge
Total Gate Charge
Reverse Transfer Capacitance
VGS=0V, VDS=0V, f=1MHz
Gate resistance
Total Gate Charge
VGS=10V, VDS=15V, ID=8A
Gate Source Charge
V
DS=5V, ID=8A
VGS=0V, VDS=15V, f=1MHz
Forward Transconductance
I
S=1A,VGS=0V
Maximum Body-Diode Continuous Current
Input Capacitance
Diode Forward Voltage
DYNAMIC PARAMETERS
Output Capacitance
FET2 Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
RDS(ON)
IDSS
A
V
DS=VGS ID=250A
VDS=0V, VGS= ±16V
Zero Gate Voltage Drain Current
m
V
GS=4.5V, ID=4A
Drain-Source Breakdown Voltage
I
D=250A, VGS=0V
Static Drain-Source On-Resistance
On state drain current
tr
3.5
ns
tD(off)
19
ns
tf
3.5
ns
trr
6
8
10
ns
Qrr
14
18
22
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Turn-On Rise Time
Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/s
Turn-Off DelayTime
IF=8A, dI/dt=500A/s
VGS=10V, VDS=15V, RL=1.8,
RGEN=3
Body Diode Reverse Recovery Time
Turn-Off Fall Time
A. The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation P
D is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialT
J=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of T
J(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 3: Dec 2010
www.aosmd.com
Page 6 of 9
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