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參數(shù)資料
| 型號(hào)： | AO4822 |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 8000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | GREEN, SOIC-8 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 299K |
| 代理商： | AO4822 |
AO4822
Symbol
Min
Typ
Max
Units
BVDSS
30
V
VDS=30V, VGS=0V
1
TJ=55°C
5
IGSS
10
A
VGS(th)
Gate Threshold Voltage
1.2
1.8
2.4
V
ID(ON)
48
A
15.5
19
TJ=125°C
21
25
18.5
26
m
gFS
30
S
VSD
0.75
1
V
IS
2.5
A
Ciss
600
740
888
pF
Coss
77
110
145
pF
Crss
50
82
115
pF
Rg
0.5
1.1
1.7
Qg(10V)
12
15
18
nC
Qg(4.5V)
6
7.5
9
nC
Qgs
2.5
nC
Qgd
3
nC
tD(on)
5
ns
t
3.5
ns
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
V
=10V, V =15V, R =1.8
,
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Total Gate Charge
VGS=10V, VDS=15V, ID=8A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
RDS(ON)
Static Drain-Source On-Resistance
IDSS
A
VDS=VGS ID=250A
VDS=0V, VGS= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
m
On state drain current
ID=250A, VGS=0V
VGS=10V, VDS=5V
VGS=10V, ID=8A
Forward Transconductance
Diode Forward Voltage
IS=1A,VGS=0V
VDS=5V, ID=8A
VGS=4.5V, ID=6A
Reverse Transfer Capacitance
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Drain-Source Breakdown Voltage
tr
3.5
ns
tD(off)
19
ns
tf
3.5
ns
trr
6
8
10
ns
Qrr
14
18
22
nC
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/s
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=1.8,
RGEN=3
Turn-Off Fall Time
IF=8A, dI/dt=500A/s
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P
D is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialT
J=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 5: Mar 2011
www.aosmd.com
Page 2 of 6
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO4822_101 | 功能描述:MOSFET 2N-CH 30V 8A 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):過(guò)期 FET 類型:2 個(gè) N 溝道（雙） FET 功能:標(biāo)準(zhǔn) 漏源極電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:8A 不同?Id，Vgs 時(shí)的?Rds On（最大值）:19 毫歐 @ 8A，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:2.4V @ 250μA 不同 Vgs 時(shí)的柵極電荷（Qg）:18nC @ 10V 不同 Vds 時(shí)的輸入電容（Ciss）:888pF @ 15V 功率 - 最大值:2W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商器件封裝:8-SO 標(biāo)準(zhǔn)包裝:1 |
| AO4822_11 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V Dual N-channel MOSFET |
| AO4822A | 功能描述:MOSFET 2N-CH 30V 6.8A 8SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| AO4822A_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V Dual N-channel MOSFET |
| AO4822AL | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
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