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參數(shù)資料
| 型號： | AO4813 |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 7100 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | GREEN, SOIC-8 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 280K |
| 代理商： | AO4813 |
AO4813
Symbol
Min
Typ
Max
Units
BVDSS
-30
V
VDS=-30V, VGS=0V
-1
TJ=55°C
-5
IGSS
±100
nA
VGS(th)
Gate Threshold Voltage
-1.5
-2.0
-2.5
V
ID(ON)
-40
A
17
25
TJ=125°C
24
33
27
40
m
gFS
24
S
VSD
-0.75
-1
V
IS
-2.5
A
Ciss
1040
1250
pF
Coss
180
pF
Crss
125
175
pF
Rg
2
4
6
Qg(10V)
19
nC
Qg(4.5V)
9.6
nC
Qgs
3.6
nC
Qgd
4.6
nC
tD(on)
10
ns
tr
5.5
ns
tD(off)
26
ns
tf
9
ns
trr
11.5
ns
Qrr
25
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge IF=-7.1A, dI/dt=500A/s
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=2.2,
RGEN=3
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Reverse Transfer Capacitance
Turn-Off Fall Time
Total Gate Charge
VGS=-10V, VDS=-15V, ID=-7.1A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
On state drain current
IS=-1A,VGS=0V
VDS=-5V, ID=-7.1A
VGS=-4.5V, ID=-5.6A
Forward Transconductance
Diode Forward Voltage
VGS=-10V, VDS=-5V
VGS=-10V, ID=-7.1A
RDS(ON)
Static Drain-Source On-Resistance
IDSS
A
VDS=VGS ID=-250A
VDS=0V, VGS= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
m
IF=-7.1A, dI/dt=500A/s
VGS=0V, VDS=-15V, f=1MHz
SWITCHING PARAMETERS
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
ID=-250A, VGS=0V
A. The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
Rev 9: April 2011
www.aosmd.com
Page 2 of 6
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO4813_002 | 功能描述:MOSFET P-CH DUAL 8SOIC 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):最後搶購 FET 類型:2 個(gè) P 溝道（雙） FET 功能:標(biāo)準(zhǔn) 漏源電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:7.1A（Ta） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:25 毫歐 @ 7A，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:2.5V @ 250μA 不同 Vgs 時(shí)的柵極電荷?（Qg）（最大值）:19nC @ 10V 不同 Vds 時(shí)的輸入電容（Ciss）（最大值）:1250pF @ 15V 功率 - 最大值:2W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商器件封裝:8-SOIC 標(biāo)準(zhǔn)包裝:3,000 |
| AO4813_11 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V Dual P-Channel MOSFET |
| AO4813L | 制造商:AOS 功能描述:MOSFET |
| AO4815 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual P-Channel Enhancement Mode Field Effect Transistor |
| AO4815_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V Dual P-Channel MOSFET |
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