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參數(shù)資料
| 型號： | AO4466 |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 30 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | GREEN, SOIC-8 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 190K |
| 代理商： | AO4466 |
AO4466
Symbol
Min
Typ
Max
Units
BVDSS
30
V
1
TJ=55°C
5
IGSS
100
nA
VGS(th)
1
1.6
3
V
ID(ON)
20
A
17
23
TJ=125°C
24
30
27
35
m
gFS
10
24
S
VSD
0.75
1
V
IS
4.3
A
Ciss
621
820
pF
Coss
118
pF
Crss
85
119
pF
Rg
0.4
0.8
1.5
Qg(10V)
11.3
17
nC
Qg(4.5V)
5.7
8
nC
Qgs
2.1
nC
Qgd
3
nC
tD(on)
4.5
6.5
ns
tr
3.1
5
ns
tD(off)
15.1
23
ns
tf
2.7
5
ns
trr
15.5
21
ns
Qrr
7.1
nC
trr
8.1
11
ns
Qrr
10.8
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
IF=9.4A, dI/dt=100A/s
Body Diode Reverse Recovery Charge IF=9.4A, dI/dt=100A/s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=9.4A, dI/dt=500A/s
Drain-Source Breakdown Voltage
On state drain current
ID=250A, VGS=0V
VGS=4.5V, VDS=5V
VGS=10V, ID=9.4A
Reverse Transfer Capacitance
IF=9.4A, dI/dt=500A/s
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
IDSS
A
Gate Threshold Voltage
VDS=VGS ID=250A
VDS=30 VGS=0V
VDS=0V, VGS= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
VGS=4.5V, ID=5A
IS=1A,VGS=0V
VDS=5V, ID=9.4A
Total Gate Charge
Gate Source Charge
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=1.6,
RGEN=3
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
VGS=10V, VDS=15V, ID=9.4A
Total Gate Charge
Gate Drain Charge
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
G: L=100uH, VDD=0V, RG=0 , rated VDS=30V and VGS=10V
Rev 7: Nov. 2010
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO4466_102 | 功能描述:MOSFET N-CH 30V 10A 8-SOIC 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):過期 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標準 漏源極電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時）:10A（Ta） 不同?Id，Vgs 時的?Rds On（最大值）:23 毫歐 @ 10A，10V 不同 Id 時的 Vgs（th）（最大值）:2.6V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:8.6nC @ 10V 不同 Vds 時的輸入電容（Ciss）:448pF @ 15V 功率 - 最大值:3.1W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商器件封裝:8-SO 標準包裝:1 |
| AO4466_12 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V N-Channel MOSFET |
| AO4468 | 功能描述:MOSFET N-CH 30V 11.6A 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| AO4468_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V N-Channel MOSFET |
| AO4470 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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