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參數(shù)資料
| 型號： | AO4449 |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 7000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | GREEN, SOIC-8 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 555K |
| 代理商： | AO4449 |
AO4449
Symbol
Min
Typ
Max
Units
BVDSS
-30
V
VDS=-30V, VGS=0V
-1
TJ=55°C
-5
The AO4449 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.
±100
nA
VGS(th)
Gate Threshold Voltage
-1.3
-1.85
-2.4
V
ID(ON)
-40
A
21
34
TJ=125°C
31.5
38
33
54
m
gFS
18
S
VSD
-0.8
-1
V
IS
-3.5
A
Ciss
600
760
910
pF
Coss
100
140
180
pF
Crss
60
95
135
pF
Rg
1.5
3.2
5
Qg(10V)
11
13.6
16
nC
Qg(4.5V)
5.4
6.7
8
nC
Qgs
2
2.5
3
nC
Qgd
1.9
3.2
4.5
nC
tD(on)
8
ns
t
6
ns
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
V
=-10V, V =-15V,
Total Gate Charge
VGS=-10V, VDS=-15V, ID=-7A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
IS=-1A,VGS=0V
VDS=-5V, ID=-7A
VGS=-4.5V, ID=-5A
Forward Transconductance
Diode Forward Voltage
Gate resistance
VGS=0V, VDS=0V, f=1MHz
A
VDS=VGS ID=-250A
VDS=0V, VGS= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
m
On state drain current
ID=-250A, VGS=0V
VGS=-10V, VDS=-5V
VGS=-10V, ID=-7A
RDS(ON)
Static Drain-Source On-Resistance
IDSS
Reverse Transfer Capacitance
VGS=0V, VDS=-15V, f=1MHz
SWITCHING PARAMETERS
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Drain-Source Breakdown Voltage
tr
6
ns
tD(off)
17
ns
tf
5
ns
trr
12
15
18
ns
Qrr
7.7
9.7
11.6
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge IF=-7A, dI/dt=100A/s
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V,
RL=2.15, RGEN=3
Turn-Off Fall Time
IF=-7A, dI/dt=100A/s
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P
D is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialT
J=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 2: July 2010
www.aosmd.com
Page 2 of 6
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO4449_11 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET |
| AO4449L | 功能描述:MOSFET P-CH 30V 7A 8SOIC 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):過期 FET 類型:MOSFET P 通道，金屬氧化物 FET 功能:標(biāo)準(zhǔn) 漏源極電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時）:7A（Ta） 不同?Id，Vgs 時的?Rds On（最大值）:34 毫歐 @ 7A，10V 不同 Id 時的 Vgs（th）（最大值）:2.4V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:16nC @ 10V 不同 Vds 時的輸入電容（Ciss）:910pF @ 15V 功率 - 最大值:3.1W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商器件封裝:8-SO 標(biāo)準(zhǔn)包裝:1 |
| AO4450 | 功能描述:MOSFET N-CH 40V 7A 8SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| AO4450_101 | 功能描述:MOSFET N-CH 40V 7A 8SOIC 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):過期 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標(biāo)準(zhǔn) 漏源極電壓（Vdss）:40V 電流 - 連續(xù)漏極（Id）（25°C 時）:7A（Ta） 不同?Id，Vgs 時的?Rds On（最大值）:30 毫歐 @ 7A，10V 不同 Id 時的 Vgs（th）（最大值）:3V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:13nC @ 10V 不同 Vds 時的輸入電容（Ciss）:516pF @ 20V 功率 - 最大值:3.1W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商器件封裝:8-SO 標(biāo)準(zhǔn)包裝:1 |
| AO4450_11 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:40V N-Channel MOSFET |
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