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參數(shù)資料
| 型號： | AO4403 |
| 廠商： | ALPHA |
| 英文描述： | LJT 8C 8#16 SKT RECP |
| 中文描述： | 的P -溝道增強型場效應晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 443K |
| 代理商： | AO4403 |
AO4403
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
-30
V
-1
-5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
±100
-1.3
nA
V
A
-0.7
-1
38
46
70
61
117
T
J
=125°C
49
76
11
m
m
S
V
A
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
7
-0.75
-1
-4.2
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
940
104
73
6
pF
pF
pF
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
9.4
2
3
7.6
8.6
44.7
16.5
22.7
15.9
nC
nC
nC
ns
ns
ns
ns
ns
nC
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-5A, dI/dt=100A/
μ
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
μ
A, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
GS
=-2.5V, I
D
=-1A
V
DS
=-5V, I
D
=-5A
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-10V, I
D
=-6.1A
Reverse Transfer Capacitance
Gate resistance
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
DSS
μ
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
μ
A
V
DS
=0V, V
GS
=±12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
m
V
GS
=-4.5V, I
D
=-5A
I
S
=-1A,V
GS
=0V
I
F
=-5A, dI/dt=100A/
μ
s
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=-4.5V, V
DS
=-15V, I
D
=-5A
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=-10V, V
DS
=-15V, R
L
=2.4
,
R
GEN
=6
V
GS
=0V, V
DS
=0V, f=1MHz
Input Capacitance
Output Capacitance
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Alpha & Omega Semiconductor, Ltd.
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相關代理商/技術參數(shù) |
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|---|---|
| AO4403_11 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET |
| AO4403L | 功能描述:MOSFET P-CH 30V 6A 8SOIC 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):過期 FET 類型:MOSFET P 通道，金屬氧化物 FET 功能:邏輯電平柵極，2.5V 驅動 漏源極電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時）:6A（Ta） 不同?Id，Vgs 時的?Rds On（最大值）:46 毫歐 @ 6.1A，10V 不同 Id 時的 Vgs（th）（最大值）:1.3V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:11.3nC @ 4.5V 不同 Vds 時的輸入電容（Ciss）:1128pF @ 15V 功率 - 最大值:3.1W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商器件封裝:8-SO 標準包裝:1 |
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| AO4404_08 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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