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參數(shù)資料
| 型號： | AO3700 |
| 廠商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| 中文描述： | N溝道增強模式場效應(yīng)晶體管肖特基二極管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 125K |
| 代理商： | AO3700 |
AO3700
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
30
V
1
5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
100
2
nA
V
A
1
1.4
10
51
64
60
100
11.7
0.81
65
90
75
160
T
J
=125°C
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
S
V
A
1
2.5
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
226
39
29
1.4
270
pF
pF
pF
2.5
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
SCHOTTKY PARAMETERS
V
F
Forward Voltage Drop
4.6
1.4
0.55
2.6
3.2
14.5
2.1
10.2
3.8
5.5
nC
nC
nC
ns
ns
ns
ns
ns
nC
13
0.39
0.5
0.1
20
V
C
T
t
rr
Q
rr
34
5.2
0.8
pF
ns
nC
10
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
mA
V
R
=16V, T
J
=125°C
V
R
=10V
I
F
=1A, dI/dt=100A/
μ
s
I
F
=1A, dI/dt=100A/
μ
s
Junction Capacitance
Schottky Reverse Recovery Time
Schottky Reverse Recovery Charge
I
F
=0.5A
V
R
=16V
I
rm
Maximum reverse leakage current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery ChargeI
F
=3.3A, dI/dt=100A/
μ
s
I
F
=3.3A, dI/dt=100A/
μ
s
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=15V, R
L
=4.7
,
R
GEN
=6
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=4.5V, V
DS
=15V, I
D
=3.3A
Maximum Body-Diode Continuous Current
V
GS
=0V, V
DS
=15V, f=1MHz
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=3.3A
I
S
=1A,V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=3.3A
m
V
GS
=4.5V, I
D
=3.0A
V
GS
=2.5V, I
D
=1A
Gate Threshold Voltage
On state drain current
V
DS
=V
GS
I
D
=250
μ
A
V
GS
=4.5V, V
DS
=5V
μ
A
Gate-Body leakage current
V
DS
=0V, V
GS
=±12V
Drain-Source Breakdown Voltage
I
D
=250
μ
A, V
GS
=0V
V
DS
=24V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating. Rev0: October 2005
Alpha & Omega Semiconductor, Ltd.
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| AO3701 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
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