參數(shù)資料
型號(hào): AO3701
廠商: ALPHA
英文描述: P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
中文描述: P通道增強(qiáng)模式場(chǎng)的肖特基二極管晶體管
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 131K
代理商: AO3701
Symbol
V
DS
V
GS
Units
V
V
T
A
=25°C
T
A
=70°C
I
DM
V
KA
V
T
A
=25°C
T
A
=70°C
I
FM
T
A
=25°C
T
A
=70°C
T
J
, T
STG
°C
Symbol
Units
R
θ
JL
R
θ
JL
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
MOSFET
-20
±12
-3
-2.3
-10
Schottky
Continuous Drain Current
A
Pulsed Drain Current
B
Schottky reverse voltage
I
D
A
20
2
1
10
0.92
Continuous Forward Current
A
Pulsed Forward Current
B
I
F
A
W
0.72
0.59
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Power Dissipation
P
D
1.14
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Typ
80.3
117
43
Max
110
150
80
t
10s
Steady-State
Steady-State
R
θ
JA
°C/W
t
10s
Steady-State
Steady-State
R
θ
JA
109.4
136.5
58.5
135
175
80
°C/W
AO3701
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Features
V
DS
(V) = -20V
I
D
= -3A (V
GS
= -10V)
R
DS(ON)
< 80m
(V
GS
= -10V)
R
DS(ON)
< 100m
(V
GS
= -4.5V)
R
DS(ON)
< 145m
(V
GS
= -2.5V)
ESD Rating: 2000V HBM
SCHOTTKY
V
DS
(V) = 20V, I
F
= 1A, V
F
<0.5V@0.5A
General Description
The AO3701 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications. It is
ESD protected.
Standard Product AO3701 is Pb-free (meets
ROHS & Sony 259 specifications). AO3701L is a Green
Product ordering option. AO3701 and AO3701L are
electrically identical.
SOT-23-5
Top View
1
2
3
5
4
G
S
A
D
K
A
K
D
S
G
Alpha & Omega Semiconductor, Ltd.
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