參數(shù)資料
型號： AO3409L
廠商： ALPHA
元件分類： MOSFETs
英文描述： P-Channel Enhancement Mode Field Effect Transistor
中文描述： 的P -溝道增強型場效應(yīng)晶體管
文件頁數(shù)： 2/4頁
文件大?。?/td> 116K
代理商： AO3409L
AO3409
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
-30
V
-1
-5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
±100
-3
nA
V
A
-1
-5
-1.9
97
135
166
3.8
-0.82
130
150
200
T
J
=125°C
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
3
S
V
A
-1
-2
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge(10V)
302
50.3
37.8
12
370
pF
pF
pF
18
Q
g
(10)
Q
g
(4.5)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
6.8
2.4
1.6
0.95
7.5
3.2
17
6.8
16.8
10
9
nC
nC
nC
nC
ns
ns
ns
ns
22
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-10V, V
DS
=-15V, I
D
=-2.6A
I
F
=-2.6A, dI/dt=100A/
μ
s
V
GS
=0V, V
DS
=-15V, f=1MHz
Total Gate Charge(4.5V)
Gate Source Charge
Gate Drain Charge
V
GS
=-10V, V
DS
=-15V, R
L
=5.8
,
R
GEN
=3
Gate resistance
m
V
GS
=-4.5V, I
D
=-2A
V
DS
=-5V, I
D
=-2.5A
I
S
=-1A,V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
μ
A
Gate Threshold Voltage
On state drain current
V
DS
=V
GS
I
D
=-250
μ
A
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-10V, I
D
=-2.6A
V
DS
=-24V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-2.6A, dI/dt=100A/
μ
s
I
D
=-250
μ
A, V
GS
=0V
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
Rev 4: June 2005
≤
10s thermal
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Alpha & Omega Semiconductor, Ltd.
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