
V
O
–7.3
V
–7
V
O
V
REG
IN
70
35
mV
mV
mV
mV
mA
mA
mA
μ
V
6
2
REG
L
20
10
2
I
Bias
175
V
no
dB
0.8
0.4
–7.35
140
70
4
59
–6.7
–6.65
RR
V
1.1
mA
mA
50
1000
– 0.5
Parameter
Symbol
Condition
min
typ
max
Output voltage
Output voltage tolerance
Line regulation
Load regulation
Bias current
Input bias current fluctuation
Load bias current fluctuation
Output noise voltage
Ripple rejection ratio
Minimum input/output voltage difference
Output short circuit current
Peak output current
Output voltage temperature coefficient
Unit
V
I
=–9 to –25V,
I
O
=5 to 350mA, P
D
*
V
I
=–9 to –25V, T
j
=25C
V
I
=–10 to –20V, T
j
=25C
I
O
=5 to 500mA, T
j
=25C
I
O
=5 to 350mA, T
j
=25C
T
j
=25C
V
I
=–10 to –25V, T
j
=25C
I
O
=5 to 350mA, T
j
=25C
f=10Hz to 100kHz, Ta=25C
V
=–10 to –20V, I
O
=100mA,
f=120Hz, Ta=25C
T
j
=25C
V
I
=–35V, T
j
=25C
T
j
=25C
I
O
=5mA, T
j
=0 to 125C
I
O (Short)
I
O (peak)
V
O
/Ta
Note 1) The specified condition T
j
=25C means that the test should be carried out with the test time so short (within 10ms) that the
drift in characteristic value due to the rise in chip junction temperature can be ignored.
Note 2) When not specified, V
=–12V, I
O
=350mA, C
I
=2
μ
F, C
O
=1
μ
F and T
j
=0 to 125C
* AN79M07 : 15W, AN79M07F : 10.25W
I
Electrical Characteristics (Ta=25C)
·
AN79M07/AN79M07F (–7V Type)
T
j
=25C
I
bias (IN)
I
bias (L)
V
DIF (min.)
mV/C
<
V
O
–8.3
V
–8
V
O
V
REG
IN
80
40
mV
mV
mV
mV
mA
mA
mA
μ
V
REG
L
2
I
Bias
200
V
no
dB
0.8
0.4
–8.4
160
80
4
59
–7.7
–7.6
RR
V
1.1
mA
mA
50
1000
– 0.6
6
2
25
10
Parameter
Symbol
Condition
min
typ
max
Output voltage
Output voltage tolerance
Line regulation
Load regulation
Bias current
Input bias current fluctuation
Load bias current fluctuation
Output noise voltage
Ripple rejection ratio
Minimum input/output voltage difference
Output short circuit current
Peak output current
Output voltage temperature coefficient
Unit
V
I
=–10.5 to –25V,
I
O
=5 to 350mA, P
D
*
V
I
=–10.5 to –25V, T
j
=25C
V
I
=–11 to –21V, T
j
=25C
I
O
=5 to 500mA, T
j
=25C
I
O
=5 to 350mA, T
j
=25C
T
j
=25C
V
I
=–10.5 to –25V, T
j
=25C
I
O
=5 to 350mA, T
j
=25C
f=10Hz to 100kHz, Ta=25C
V
=–11.5 to –21.5V, I
O
=100mA,
f=120Hz, Ta=25C
T
j
=25C
V
I
=–35V, T
j
=25C
T
j
=25C
I
O
=5mA, T
j
=0 to 125C
I
O (Short)
I
O (peak)
V
O
/Ta
Note 1) The specified condition T
j
=25C means that the test should be carried out with the test time so short (within 10ms) that the
drift in characteristic value due to the rise in chip junction temperature can be ignored.
Note 2) When not specified, V
=–14V, I
O
=350mA, C
I
=2
μ
F, C
O
=1
μ
F and T
j
=0 to 125C
* AN79M08 : 15W, AN79M08F : 10.25W
T
j
=25C
I
bias (IN)
I
bias (L)
V
DIF (min.)
mV/C
·
AN79M08/AN79M08F (–8V Type)
<