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V
O
–6.25
V
–6
V
O
V
REG
IN
60
40
mV
mV
mV
mV
mA
mA
mA
μ
V
REG
L
2
I
Bias
150
V
no
dB
0.8
0.4
–6.3
120
60
4
60
–5.75
–5.7
RR
V
1.1
mA
mA
50
1000
–0.4
5
1.5
20
10
Parameter
Symbol
Condition
min
typ
max
Output voltage
Output voltage tolerance
Line regulation
Load regulation
Bias current
Input bias current fluctuation
Load bias current fluctuation
Output noise voltage
Ripple rejection ratio
Minimum input/output voltage difference
Output short circuit current
Peak output current
Output voltage temperature coefficient
Unit
V
I
=–8 to –25V,
I
O
=3 to 350mA, P
D
*
V
I
=–8 to –25V, T
j
=25C
V
I
=–9 to –19V, T
j
=25C
I
O
=5 to 500mA, T
j
=25C
I
O
=5 to 350mA, T
j
=25C
T
j
=25C
V
I
=–9 to –25V, T
j
=25C
I
O
=5 to 350mA, T
j
=25C
f=10Hz to 100kHz, Ta=25C
V
=–9 to –19V, I
O
=100mA,
f=120Hz, Ta=25C
T
j
=25C
V
I
=–35V, T
j
=25C
T
j
=25C
I
O
=5mA, T
j
=0 to 125C
I
O (Short)
I
O (peak)
DV
O
/Ta
Note 1) The specified condition T
j
=25C means that the test should be carried out with the test time so short (within 10ms) that the
drift in characteristic value due to the rise in chip junction temperature can be ignored.
Note 2) When not specified, V
=–11V, I
O
=350mA, C
I
=2
μ
F, C
O
=1
μ
F and T
j
=0 to 125C
* AN79M06 : 15W, AN79M06F : 10.25W
T
j
=25C
I
bias (IN)
I
bias (L)
V
DIF (min.)
mV/C
·
AN79M06/AN79M06F (–6V Type)
<
V
O
–5.4
V
–5.2
V
O
V
REG
IN
50
30
mV
mV
mV
mV
mA
mA
mA
μ
V
REG
L
2
I
Bias
I
bias (IN)
I
bias (L)
130
V
no
dB
0.8
0.4
–5.46
100
50
4
60
–5.0
–4.94
RR
V
=–8 to –18V, f=120Hz,
I
O
=100mA
T
j
=25C
V
I
=–35V, T
j
=25C
T
j
=25C
I
O
=5mA, T
j
=0 to 125C
V
1.1
mA
mA
50
1000
– 0.4
Parameter
Symbol
Condition
min
typ
max
Output voltage
Output voltage tolerance
Line regulation
Load regulation
Bias current
Input bias current fluctuation
Load bias current fluctuation
Output noise voltage
Ripple rejection ratio
Minimum input/output voltage difference
Output short circuit current
Peak output current
Output voltage temperature coefficient
Unit
I
Electrical Characteristics (Ta=25C)
·
AN79M52/AN79M52F (–5.2V Type)
V
I
=–7 to –25V,
I
O
=5 to 350mA, P
D
*
V
I
=–7 to –25V, T
j
=25C
V
I
=–8 to –18V, T
j
=25C
I
O
=5 to 500mA, T
j
=25C
I
O
=5 to 350mA, T
j
=25C
T
j
=25C
V
I
=–8 to –25V, T
j
=25C
I
O
=5 to 350mA, T
j
=25C
f=10Hz to 100kHz, Ta=25C
I
O (Short)
I
O (peak)
V
O
/Ta
Note 1) The specified condition T
j
=25C means that the test should be carried out with the test time so short (within 10ms) that the
drift in characteristic value due to the rise in chip junction temperature can be ignored.
Note 2) When not specified, V
=–10V, I
O
=350mA, C
I
=2
μ
F, C
O
=1
μ
F and T
j
=0 to 125C
* AN79M52 : 15W, AN79M52F : 10.25W
T
j
=25C
V
DIF (min.)
mV/C
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