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7
V
O
–20.8
V
–20
V
O
V
REG
IN
400
200
400
200
mV
mV
mV
mV
mA
mA
mA
μ
V
16
5.5
REG
L
12
4
3
I
bias
135
67
V
no
RR
dB
V
A
1
0.5
–21
5
52
–19.2
–19
1.1
2.1
–1
typ
Output voltage
Output voltage tolerance
Line regulation
Load regulation
Bias current
Input bias fluctuation
Load bias current fluctuation
Output noise voltage
Ripple rejection ratio
Minimum input/output voltage difference
Peak output current
Output voltage temperature coefficient
I
Electrical Characteristics
(Ta
=
25C) (continued)
AN7920T/AN7920F (–20V Type)
Parameter
Symbol
Condition
min
max
Unit
V
I
=
–23 to –35V,
I
O
=
5mA to 1A, P
D
*
V
I
=
–23 to –35V, T
j
=
25C
V
I
=
–26 to –32V, T
j
=
25C
I
O
=
5mA to 1.5A, T
j
=
25C
I
O
=
250 to 750mA, T
j
=
25C
T
j
=
25C
V
I
=
–23 to –35V, T
j
=
25C
I
O
=
5mA to 1A, T
j
=
25C
f
=
10Hz to 100kHz, Ta
=
25C
V
I
=
–24 to –34V, I
O
=
100mA, f
=
120Hz
I
O
=
1A, T
j
=
25C
T
j
=
25C
I
O
=
5mA, T
j
=
0 to 125C
T
j
=
25C
I
bias (IN)
I
bias (L)
V
DIF (min.)
I
O (Peak)
V
O
/Ta
mV/C
Note 1) The specified condition T
=
25C means that the test should be carried out with the test time so short (within 10ms) that the
drift in characteristic value due to the rise in chip junction temperature can be ignored.
Note 2) Unless otherwise specified, V
=
–29V, I
=
500mA, C
I
=
2
μ
F, C
O
=
1
μ
F, T
j
=
0 to 125C
* AN7900T series : 15W, AN7900F series : 10.25W
<
=
V
O
–25
V
–24
V
O
V
REG
IN
480
240
480
240
mV
mV
mV
mV
mA
mA
mA
μ
V
18
6
REG
L
12
4
3
I
bias
170
65
V
no
RR
dB
V
A
1
0.5
–25.2
5
50
–23
–22.8
1.1
2.1
–1
typ
Output voltage
Output voltage tolerance
Line regulation
Load regulation
Bias current
Input bias fluctuation
Load bias current fluctuation
Output noise voltage
Ripple rejection ratio
Minimum input/output voltage difference
Peak output current
Output voltage temperature coefficient
Parameter
Symbol
Condition
min
max
Unit
V
I
=
–27 to –38V,
I
O
=
5mA to 1A, P
D
*
V
I
=
–27 to –38V, T
j
=
25C
V
I
=
–30 to –36V, T
j
=
25C
I
O
=
5mA to 1.5A, T
j
=
25C
I
O
=
250 to 750mA, T
j
=
25C
T
j
=
25C
V
I
=
–27 to –38V, T
j
=
25C
I
O
=
5mA to 1A, T
j
=
25C
f
=
10Hz to 100kHz, Ta
=
25C
V
I
=
–28 to –38V, I
O
=
100mA, f
=
120Hz
I
O
=
1A, T
j
=
25C
T
j
=
25C
I
O
=
5mA, T
j
=
0 to 125C
T
j
=
25C
I
bias (IN)
I
bias (L)
V
DIF (min.)
I
O (Peak)
V
O
/Ta
mV/C
Note 1) The specified condition T
j
=
25C means that the test should be carried out with the test time so short (within 10ms) that the
drift in characteristic value due to the rise in chip junction temperature can be ignored.
Note 2) Unless otherwise specified, V
=
–33V, I
=
500mA, C
I
=
2
μ
F, C
O
=
1
μ
F, T
j
=
0 to 125C
* AN7900T series : 15W, AN7900F series : 10.25W
AN7924T/AN7924F (–24V Type)
<
=