參數(shù)資料
型號: AN7915T
廠商: PANASONIC CORP
元件分類: 基準電壓源/電流源
英文描述: 3-pin Negative Output Voltage Regulators (1A Type)
中文描述: 15 V FIXED NEGATIVE REGULATOR, PSFM3
封裝: TO-220AB, 3 PIN
文件頁數(shù): 3/8頁
文件大?。?/td> 102K
代理商: AN7915T
3
V
O
–6.25
V
–6
V
O
V
REG
IN
120
60
120
60
mV
mV
mV
mV
mA
mA
mA
μ
V
4
REG
L
10
3
2
1.5
I
bias
44
73
V
no
RR
dB
V
A
1.3
0.5
–6.3
4
60
–5.75
–5.7
1.1
2.1
– 0.5
typ
Output voltage
Output voltage tolerance
Line regulation
Load regulation
Bias current
Input bias fluctuation
Load bias current fluctuation
Output noise voltage
Ripple rejection ratio
Minimum i/o voltage difference
Peak output current
Output voltage temperature coefficient
Parameter
Symbol
Condition
min
max
Unit
V
I
=
–8 to –21V,
I
O
=
5mA to 1A, P
D
*
V
I
=
–8 to –25V, T
j
=
25C
V
I
=
–9 to –13V, T
j
=
25C
I
O
=
5mA to 1.5A, T
j
=
25C
I
O
=
250 to 750mA, T
j
=
25C
T
j
=
25C
V
I
=
–8 to –25V, T
j
=
25C
I
O
=
5mA to 1A, T
j
=
25C
f
=
10Hz to 100kHz, Ta
=
25C
V
I
=
–9 to –19V, I
O
=
100mA, f
=
120Hz
I
O
=
1A, T
j
=
25C
T
j
=
25C
I
O
=
5mA, T
j
=
0 to 125C
T
j
=
25C
I
bias (IN)
I
bias (L)
V
DIF (min.)
I
O (Peak)
V
O
/Ta
mV/C
Note 1) The specified condition T
=
25C means that the test should be carried out with the test time so short (within 10ms) that the
drift in characteristic value due to the rise in chip junction temperature can be ignored.
Note 2) Unless otherwise specified, V
=
–11V, I
=
500mA, C
I
=
2
μ
F, C
O
=
1
μ
F, T
j
=
0 to 125C
* AN7900T series : 15W, AN7900F series : 10.25W
I
Electrical Characteristics
(Ta
=
25C) (continued)
AN7906T/AN7906F (–6V Type)
<
=
V
O
–7.3
V
–7
V
O
V
REG
IN
140
70
140
70
mV
mV
mV
mV
mA
mA
mA
5
REG
L
12
4
2
1.5
I
bias
48
72
V
no
RR
dB
V
A
1.3
0.5
–7.35
4
58
–6.7
–6.65
1.1
2.1
– 0.5
typ
Output voltage
Output voltage tolerance
Line regulation
Load regulation
Bias current
Input bias fluctuation
Load bias current fluctuation
Output noise voltage
Ripple rejection ratio
Minimum input/output voltage difference
Peak output current
Output voltage temperature coefficient
Parameter
Symbol
Condition
min
max
Unit
V
I
=
–79 to –22V,
I
O
=
5mA to 1A, P
D
*
V
I
=
–9 to –25V, T
j
=
25C
V
I
=
–10 to –14V, T
j
=
25C
I
O
=
5mA to 1.5A, T
j
=
25C
I
O
=
250 to 750mA, T
j
=
25C
T
j
=
25C
V
I
=
–9 to –25V, T
j
=
25C
I
O
=
5mA to 1A, T
j
=
25C
f
=
10Hz to 100kHz, Ta
=
25C
V
I
=
–10 to –20V, I
O
=
100mA, f
=
120Hz
I
O
=
1A, T
j
=
25C
T
j
=
25C
I
O
=
5mA, T
j
=
0 to 125C
μ
V
T
j
=
25C
I
bias (IN)
I
bias (L)
V
DIF (min.)
I
O (Peak)
V
O
/Ta
mV/C
Note 1) The specified condition T
j
=
25C means that the test should be carried out with the test time so short (within 10ms) that the
drift in characteristic value due to the rise in chip junction temperature can be ignored.
Note 2) Unless otherwise specified, V
=
–12V, I
=
500mA, C
I
=
2
μ
F, C
O
=
1
μ
F, T
j
=
0 to 125C
* AN7900T series : 15W, AN7900F series : 10.25W
AN7907T/AN7907F (–7V Type)
<
=
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