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參數(shù)資料
| 型號： | AM80814-005 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF & Microwave Transistors L-Band Radar Applications(用于L波段雷達(dá)脈沖驅(qū)動的RF和微波晶體管) |
| 中文描述： | 射頻 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 72K |
| 代理商： | AM80814-005 |
August 1992
L-BAND RADAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
.310 x .310 2LFL (S064)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
5:1 VSWR CAPABILITY
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
5.0 W MIN. WITH 8.5 dB GAIN
DESCRIPTION
The AM80814-005 device is a high power Class
C transistor specifically designed for L-Band radar
pulsed driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures and is capable of withstanding 5:1 output
VSWR at rated RF conditions. Low thermal re-
sistance and computerized automatic wire bonding
techniques ensure high reliability and product con-
sistency.
The AM80814-005 is supplied inthe IMPAC
Her-
metic Metal/Ceramic package with internal
Input/Output matching structures.
PIN CONNECTION
BRANDING
80814-5
ORDER CODE
AM80814-005
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
P
DISS
Power Dissipation*
I
C
Device Current*
V
CC
Collector-Supply Voltage*
T
J
Junction Temperature (Pulsed RF Operation)
T
STG
Storage Temperature
Parameter
(T
C
≤
100
°
C)
Value
23
Unit
W
1.0
28
250
A
V
°
C
°
C
- 65 to +200
R
TH(j-c)
Junction-Case Thermal Resistance*
6.5
°
C/W
*Appliesonlyto ratedRF amplifier operation
AM80814-005
1. Collector
2. Base
3. Emitter
4. Base
THERMAL DATA
1/5
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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