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參數(shù)資料
| 型號(hào)： | AM80814-025 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF & Microwave Transistors L-Band Radar Applications(用于L波段雷達(dá)的RF和微波晶體管) |
| 中文描述： | 射頻 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 55K |
| 代理商： | AM80814-025 |
PRELIMINARY DATA
August 1992
L-BAND RADAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .400 2LFL (S036)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
25 W MIN. WITH 7.0 dB GAIN
DESCRIPTION
AM80814-025 is a high power silicon Class C tran-
sistor designed for ultra-broadband L-Band radar
applications.
This device is capable of operation over a broad
range of pulse widths and duty cycles. Low RF
thermal resistance and computerized automatic
wire bonding techniques ensure high reliability and
product consistency.
AM80814-025 is supplied in the industry-standard
AMPAC hermetic Metal/Ceramic package incor-
porating Input/Output impedance matching.
PIN CONNECTION
BRANDING
80814-25
ORDER CODE
AM80814-025
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
P
DISS
I
C
V
CC
T
J
T
STG
Parameter
Value
75
Unit
W
Power Dissipation*(T
C
≤
75C)
Device Current*
Collector-Supply Voltage*
3.5
38
A
V
°
C
°
C
Junction Temperature (Pulsed RF Operation)
Storage Temperature
250
65 to +200
R
TH(j-c)
Junction-Case Thermal Resistance*
2.3
°
C/W
*Applies only to rated RF amplifier operation
AM80814-025
1. Collector
2. Base
3. Emitter
4. Base
THERMAL DATA
1/3
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