參數(shù)資料
型號: AM79761
廠商: Advanced Micro Devices, Inc.
英文描述: Physical Layer 10-Bit Transceiver for Gigabit Ethernet (GigaPHY⑩-SD)
中文描述: 物理層10位千兆以太網(wǎng)收發(fā)器(GigaPHY⑩,標(biāo)清)
文件頁數(shù): 12/20頁
文件大?。?/td> 132K
代理商: AM79761
12
Am79761
P R E L I M I N A R Y
ABSOLUTE MAXIMUM RATINGS
Storage Temperature . . . . . . . . . . . .-65
Ambient Temperature Under Bias . .-55
Power Supply Voltage (V
DC Voltage (PECL Inputs) . . . . . .-0.5 V to V
DC Voltage (TTL Inputs). . . . . . . . . . . -0.5 V to +5.5 V
Output Current (TTL Outputs) . . . . . . . . . . . .-
Output Current (PECL Outputs). . . . . . . . . . .-
Maximum Input ESD (Human Body Model). . . 1500 V
Stresses above those listed under Absolute Maximum
Ratings may cause permanent device failure.
Functionality at or above these limits is not implied.
Exposure to absolute maximum ratings for extended
periods may affect device reliability.
°
°
C to +150
C to +125
°
°
C
C
DD
) . . . . . . . -0.5 V to +4.0 V
DD
+0.5 V
±
±
50 mA
50 mA
OPERATING RANGES
Temperature (T
. . . . . . . . . . . . .0
Power Supply Voltage (D
Operating ranges define those limits between which
functionality of the device is guaranteed.
A
) 0
°
°
C to +70
C to +50
°
°
) . . . . . . . . . +3.3 V
C for 14 x 14 mm PQFP
C for 10 x 10 mm PQFP
VDD
±
5%
DC CHARACTERISTICS (over recommended operating conditions)
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
V
IH
Input HIGH voltage (TTL)
2.0
5.5
V
V
IL
Input LOW voltage (TTL)
0
0.8
V
I
IH
Input HIGH current (TTL)
V
IN
=2.4 V
50
500
μ
A
I
IL
Input LOW current (TTL)
V
IN
=0.5 V
-500
μ
A
V
OH
Output HIGH voltage (TTL)
I
OH
= -1.0 mA
2.4
V
V
OL
Output LOW voltage (TTL)
I
OL
= +1.0 mA
0.5
V
V
OUT75
TX Output differential peak-to-
peak voltage swing
75
to V
DD
– 2.0 V
1200
2200
mVp-p
V
OUT50
TX Output differential peak-to-
peak voltage swing
50
to V
DD
– 2.0 V
1200
2200
mVp-p
V
IN
Receiver differential peak-to-
peak Input Sensitivity RX
Internally biased to V
DD
/2
400
3200
mVp-p
I
DD
Supply Current
Outputs open,
V
DD
= V
DD
max
210
290
mA
P
D
Power dissipation
Outputs open,
V
DD
= V
DD
max
700
1000
mW
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