參數(shù)資料
型號: AM75PDL191BHHA70I
廠商: SPANSION LLC
元件分類: 存儲器
英文描述: 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA73
封裝: 9 X 13 MM, FBGA-73
文件頁數(shù): 66/129頁
文件大?。?/td> 980K
代理商: AM75PDL191BHHA70I
64
Am75PDL191BHHa/Am75PDL193BHHa
February 6, 2004
A D V A N C E I N F O R M A T I O N
pSRAM DC & OPERATING CHARACTERISTICS
Notes:
1. TA= –40 to 85°C, otherwise specified.
2. Overshoot: V
CC
+ 1.0V in case of pulse width
20 ns.
3. Undershoot: –1.0 V in case of pulse width
20 ns.
4. Overshoot and undershoot are sampled, not 100%
tested.
CAPACITANCE
Notes:
1. Capacitance is sampled, not 100% tested.
DC and Operating Characteristics
Notes:
1. Typical values are tested at VCC = 2.9, TA = 25C and not guaranteed.
2. Standby mode is supposed to be set up after at least one active operation. I
SB1
is measured after 60 ms from the time when
standby mode is set up.
Item
Symbol
Min
Typ
Max
Unit
Supply Voltage
V
CC
2.7
2.9
3.1
V
Ground
V
SS
0
0
0
V
Input High Voltage
V
IH
2.2
VCC + 0.3
(Note 2)
V
Input Low Voltage
V
IL
–0.3 (Note 3)
0.6
V
Item
Symbol
C
IN
C
IO
Test Conditions
V
IN
= 0 V
V
IO
= 0 V
Min
Max
8
10
Unit
pF
pF
Input Capacitance
Input/Output Capacitance
Item
Symbol
I
LI
Test Conditions
V
IN
= V
SS
to V
CC
Min
-1
Typ
Max
1
Unit
μA
Input Leakage Current
Output Leakage Current
I
LO
CS#1s = V
IH
, CS2s = V
IH
, OE# = V
IH
or WE# =
V
IL
, V
IO
= V
SS
to V
CC
Cycle time = 1 μs, 100% duty, I
IO
= 0 mA,
CS#1s
0.2 V, CS2s
V
CC
-0.2 V,
V
IN
0.2 V or V
IN
V
CC
-0.2 V
Cycle Time = Min, I
IO
= 0 mA, 100% duty,
CS#1s = V
IL
, CS2s = V
IH
, V
IN
= V
IL
or V
IH
I
OL
= 2.1 mA
IOH = –1.0 mA
CS#1s
V
CC
-0.2 CS2s
V
CC
-0.2 V,
Other Inputs = V
SS
to V
CC
CS2s
0.2, Other Inputs = V
SS
to V
CC
-1
1
μA
Average Operating Current
I
CC1
4
7
mA
I
CC2
30
35
mA
Output Low Voltage
Output High Voltage
V
OL
V
OH
0.4
V
V
2.4
Standby Current (CMOS)
I
SB1
80
μA
Deep Power Down
I
SBD
20
μA
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