- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375309 > AM70PDL7BDH85IS (Spansion Inc.) Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) PDF資料下載
參數(shù)資料
| 型號： | AM70PDL7BDH85IS |
| 廠商： | Spansion Inc. |
| 英文描述： | Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) |
| 中文描述： | 堆疊式多芯片封裝（MCP / XIP）的快閃記憶體，數(shù)據(jù)存儲的MirrorBit閃存和移動存儲芯片（XIP）的 |
| 文件頁數(shù)： | 57/128頁 |
| 文件大?。?/td> | 916K |
| 代理商： | AM70PDL7BDH85IS |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁當前第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁第105頁第106頁第107頁第108頁第109頁第110頁第111頁第112頁第113頁第114頁第115頁第116頁第117頁第118頁第119頁第120頁第121頁第122頁第123頁第124頁第125頁第126頁第127頁第128頁
November 25, 2003
Am70PDL127BDH/Am70PDL129BDH
55
A D V A N C E I N F O R M A T I O N
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin
which indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after
the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, sev-
eral RY/BY# pins can be tied together in parallel with a
pull-up resistor to V
CC
.
If the output is low (Busy), the device is actively eras-
ing or programming. (This includes programming in
the Erase Suspend mode.) If the output is high
(Ready), the device is in the read mode, the standby
mode, or one of the banks is in the erase-sus-
pend-read mode.
Table 18 shows the outputs for RY/BY#.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or com-
plete, or whether the device has entered the Erase
Suspend mode. Toggle Bit I may be read at any ad-
dress, and is valid after the rising edge of the final
WE# pulse in the command sequence (prior to the
program or erase operation), and during the sector
erase time-out.
During an Embedded Program or Erase algorithm op-
eration, successive read cycles to any address cause
DQ6 to toggle. The system may use either OE# or
CE#f1 to control the read cycles. When the operation
is complete, DQ6 stops toggling.
After an erase command sequence is written, if all
sectors selected for erasing are protected, DQ6 tog-
gles for approximately 400 μs, then returns to reading
array data. If not all selected sectors are protected, the
Embedded Erase algorithm erases the unprotected
sectors, and ignores the selected sectors that are pro-
tected.
The system can use DQ6 and DQ2 together to deter-
mine whether a sector is actively erasing or is
erase-suspended. When the device is actively erasing
(that is, the Embedded Erase algorithm is in progress),
DQ6 toggles. When the device enters the Erase Sus-
pend mode, DQ6 stops toggling. However, the system
must also use DQ2 to determine which sectors are
erasing or erase-suspended. Alternatively, the system
can use DQ7 (see the subsection on DQ7: Data# Poll-
ing).
If a program address falls within a protected sector,
DQ6 toggles for approximately 1 μs after the program
command sequence is written, then returns to reading
array data.
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded Pro-
gram algorithm is complete.
Table 18 shows the outputs for Toggle Bit I on DQ6.
Figure 6 shows the toggle bit algorithm.
Figure 17
in
the
“Flash AC Characteristics”
section shows the tog-
gle bit timing diagrams. Figure 18 shows the differ-
ences between DQ2 and DQ6 in graphical form. See
also the subsection on DQ2: Toggle Bit II.
Figure 7.
Toggle Bit Algorithm
START
No
Yes
Yes
DQ5 = 1
No
Yes
Toggle Bit
= Toggle
No
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Toggle Bit
= Toggle
Read Byte Twice
(DQ7–DQ0)
Address = VA
Read Byte
(DQ7–DQ0)
Address =VA
Read Byte
(DQ7–DQ0)
Address =VA
Note:
The system should recheck the toggle bit even if DQ5
= “1” because the toggle bit may stop toggling as DQ5
changes to “1.” See the subsections on DQ6 and DQ2 for
more information.
相關PDF資料 |
PDF描述 |
|---|---|
| AM70PDL7BDH85IT | Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) |
| AM70PDL9BDH66IS | Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) |
| AM70PDL9BDH66IT | Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) |
| AM70PDL9BDH85IS | Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) |
| AM70PDL9BDH85IT | Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM70PDL7BDH85IT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) |
| AM70PDL9BDH66IS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) |
| AM70PDL9BDH66IT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) |
| AM70PDL9BDH85IS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) |
| AM70PDL9BDH85IT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) |
發(fā)布緊急采購，3分鐘左右您將得到回復。