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參數(shù)資料
| 型號(hào)： | AM52-0002 |
| 元件分類： | 放大器 |
| 英文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | PLASTIC, SOIC-8 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 141K |
| 代理商： | AM52-0002 |
3.5 W High Efficiency Power Amplifier
AM52-0002
V1.00
Specifications Subject to Change Without Notice.
4
M/A-COM Inc.
North America: Tel. (800) 366-2266
Asia/Pacific: Tel. +81 (03) 3226-1671
Europe: Tel. +44 (1344) 869-595
Fax (800) 618-8883
Fax +81 (03) 3226-1451
Fax +44 (1344) 300 020
Typical Power Data (cont’d)
PAE VS. FREQUENCY
40
44
48
52
56
60
850
860
870
880
890
900
910
920
930
940
950
Freq (MHz)
PAE
(%)
+25°C
-40°C
+85°C
DRAIN CURRENT VS. V
GG
0
0.2
0.4
0.6
0.8
1
1.2
-2.25
-2
-1.75
-1.5
-1.25
-1
-0.75
VGG (V)
ID1(mA)
&
ID2(mA)
ID2
ID1
POUT, PAE VS. VGG
0
5
10
15
20
25
30
35
40
45
50
-2.25
-2
-1.75
-1.5
-1.25
-1
-0.75
VGG (V)
Pout
(dBm)
&
PAE
(%)
Pout
PAE
TEMPERATURE DERATING CURVE
0
1
2
3
4
5
6
7
8
9
10
0
25
50
75
100
125
150
175
Ambient Temperature (C)
Dissipated
Power
(W)
TEMPERATURE DERATING CURVE
Note: Dissipated power in the above curve refers to power dissipated in
output FET and is defined as (Pdiss=Vdd*Id2-Pout). Typical Thermal
Resistance (
θjc) = 15°C/W.
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