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參數(shù)資料
| 型號： | AM52-0002 |
| 元件分類： | 放大器 |
| 英文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | PLASTIC, SOIC-8 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 141K |
| 代理商： | AM52-0002 |
3.5 W High Efficiency Power Amplifier
AM52-0002
V1.00
Specifications Subject to Change Without Notice.
2
M/A-COM Inc.
North America: Tel. (800) 366-2266
Asia/Pacific: Tel. +81 (03) 3226-1671
Europe: Tel. +44 (1344) 869-595
Fax (800) 618-8883
Fax +81 (03) 3226-1451
Fax +44 (1344) 300 020
Absolute Maximum Ratings
1
Parameter
Absolute Maximum
Input Power
2
+23 dBm
Operating Voltage
2
VDD = + 10 Volts
VGG = - 6 Volts
Junction Temperature
3
+150
°C
Storage Temperature
-65
°C to +150 °C
Operating Temperature
-40
°C to +85 °C
1. Exceeding any one or combination of these limits may cause
permanent damage.
2. Ambient Temperature (T
A) = + 25
°C
3. See temperature derating curve.
Pin Configuration
Pin No.
Pin Name
Description
1
VG1
Negative supply voltage, First stage
2
RF IN
RF Input of the amplifier
3
GND
DC and RF Ground
4
VD1
Positive supply voltage, First stage
5
VG2
Negative supply voltage, First stage
6
GND
DC and RF Ground
7
RF OUT
RF Output of the amplifier
8
VD2
Positive supply voltage, Second stage
9
PUCK
DC and RF Ground
Recommended PCB Configuration
Layout View (GSM 880-915 MHz)
L1
C2
C5
C10
C8
C6
C4
C11
C1
C7
C3
C9
C12
0.3" (T1)
0.255" (T2)
Functional Block Diagram
(GSM 880-915 MHz)
1
2
4
3
8
7
5
6
C1
C3
C2
C4
C5
C6
C7
C12
C8
C11
RF OUT
RF IN
VD1
VD2
VG2
VG1
C10
T1
T2
C9
L1
9
External Circuitry Parts List
(GSM 880-915 MHz)
Part
Value
Purpose
C1 - C2
220 pF
By-Pass
C3
220 pF
Power Tuning
C4 - C7
0.1 uF
By-Pass
C8
4 pF
Power Tuning
C9, C10
47 pF
DC Block
C12
12 pF
Power Tuning
C11
1.5 uF
By-Pass
L1
8.2nH
Bias Inductor
T1
0.300”
Matching Transmission
T2
0.255”
Lines (50
)
1. The recommended layout is specifically for the GSM application. It
shows EIA code size 0603 and 0805 standard SMT capacitors with the
exception of C11 which is a EIA code size 3528
2. The location of C9, C10 and C11 is not critical to the performance of
the amplifier.
Cross Section View
RF Traces + Components
RF Ground
DC Routing
Customer Defined
The PCB dielectric between RF traces and RF ground layers should
be chosen to reduce RF discontinuities between 50
lines and
package pins. M/A-COM recommends an FR-4 dielectric thickness
of 0.008”(0.2 mm) yielding a 50
line width of 0.015”(0.38 mm).
The recommended metalization thickness is 1 oz. copper and ground
metalization thickness is 2 oz..
Shaded traces are vias to DC
Routing layer and traces on DC Routing layer.
Biasing Procedure
The AM52-0002 requires that VGG bias be applied prior to ANY
VDD bias. Permanent damage will occur if this procedure is not
followed. All FETs in the PA will draw IDSS and damage internal
circuitry. Resistance added in series with VG1 and VG2 may degrade
performance.
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