- 您現在的位置：買賣IC網 > PDF目錄366543 > AM49DL324BGT85T (ADVANCED MICRO DEVICES INC) 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit) PDF資料下載
參數資料
| 型號： | AM49DL324BGT85T |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | 存儲器 |
| 英文描述： | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit) |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA73 |
| 封裝： | 8 X 11.60 MM, PLASTIC, FBGA-73 |
| 文件頁數： | 55/64頁 |
| 文件大小： | 571K |
| 代理商： | AM49DL324BGT85T |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁當前第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁
54
Am49DL32xBG
July 19, 2002
P R E L I M I N A R Y
pSRAM AC CHARACTERISTICS
Read Cycle
Notes:
1. t
OD,
t
ODo
, t
BD
, and t
ODW
are defined as the time at which
the outputs achieve the open circuit condition and are
not referenced to output voltage levels.
2. If CE#, LB#, or UB# goes low at the same time or before
WE# goes high, the outputs will remain at high impedance.
3. If CE#, LB#, or UB# goes low at the same time or after WE#
goes low, the outputs will remain at high impedance.
Figure 28.
Psuedo SRAM Read Cycle
Parameter
Symbol
Description
Speed
Unit
70
85
t
RC
t
ACC
t
CO
t
OE
t
BA
t
COE
t
OEE
t
BE
t
OD
t
ODO
t
BD
t
OH
t
PM
t
PC
t
AA
t
AOH
Read Cycle Time
Min
70
85
ns
Address Access Time
Max
70
85
ns
Chip Enable Access Time
Max
70
85
ns
Output Enable Access Time
Max
25
ns
Data Byte Control Access Time
Max
25
ns
Chip Enable Low to Output Active
Min
10
ns
Output Enable Low to Output Active
Min
0
ns
Data Byte Control Low to Output Active
Min
0
ns
Chip Enable High to Output High-Z
Max
20
ns
Output Enable High to Output High-Z
Max
20
ns
Data Byte Control High to Output High-Z
Max
20
ns
Output Data Hold from Address Change
Min
10
ns
Page Mode Time
Min
70
ns
Page Mode Cycle Time
Min
30
ns
Page Mode Address Access Time
Max
30
ns
Page Output Data Hold Time
Min
10
ns
t
RC
t
ACC
Addresses
A0 to A20
CE#1
CE2
OE#
WE#
LB#, UB#
D
OUT
I/O1 to 16
t
CO
t
OH
Fixed High
High-Z
High-Z
t
OE
t
BA
t
OD
t
ODO
t
BD
Valid Data Out
Indeterminate
t
BE
t
OEE
t
COE
相關PDF資料 |
PDF描述 |
|---|---|
| AM49DL640AG70IS | Circular Connector; No. of Contacts:32; Series:MS27468; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:19; Circular Contact Gender:Socket; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:19-32 RoHS Compliant: No |
| AM49DL640BG70IS | PV SERIES |
| AM49DL640BG70IT | PV SERIES |
| AM49DL640BG | ECONOLINE: REC3-S_DRW(Z)/H4,H6 - Safety standards and approval: EN 60950 certified, rated for 250VAV (LVD test report)- Applied for Ul 1950 Component Recognised Certification- 3W DIP Package- 4kVDC & 6kVDC Isolation- Regulated Output- Continuous Short Circiut Protection Auto-Restarting |
| AM49DL640BG30IT | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AM49DL32XBG | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Am49DL32xBG - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM49DL32XBGB70IS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous |
| AM49DL32XBGB70IT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous |
| AM49DL32XBGB85IS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous |
| AM49DL32XBGB85IT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous |
發(fā)布緊急采購，3分鐘左右您將得到回復。