參數(shù)資料
型號： AM49DL324BGT85T
廠商： ADVANCED MICRO DEVICES INC
元件分類： 存儲器
英文描述： 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit)
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA73
封裝： 8 X 11.60 MM, PLASTIC, FBGA-73
文件頁數(shù)： 39/64頁
文件大?。?/td> 571K
代理商： AM49DL324BGT85T
38
Am49DL32xBG
July 19, 2002
P R E L I M I N A R Y
pSRAM DC & OPERATING CHARACTERISTICS
Notes:
1. V
CC
–
1.0 V for a 10 ns pulse width.
2. V
CC
+ 1.0 V for a 10 ns pulse width.
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Leakage Current
V
IN
= V
SS
to V
CC
CE1#s = V
IH
, CE2s = V
IL
or OE# = V
IH
or
WE# = V
IL
, V
IO
= V
SS
to V
CC
Cycle time = Min., I
IO
= 0 mA, 100% duty,
CE1#s = V
IL
, CE2s = V
IH
, V
IN
= V
IL
= or V
IH
,
t
RC
= Min.
Cycle time = Min., I
IO
= 0 mA, 100% duty,
CE1#s = V
IL
, CE2s = V
IH
, V
IN
= V
IL
= or V
IH
,
t
PC
= Min.
–
1.0
1.0
μA
I
LO
Output Leakage Current
–
1.0
1.0
μA
I
CC1
s
Operating Current
40
mA
I
CC2
s
Page Access Operating
Current
25
mA
V
OL
V
OH
I
SB
I
DSB
Output Low Voltage
I
OL
= 1.0 mA
I
OH
=
–
0.5 mA
CE#1 = V
CCS
–
0.2 V, CE2 = V
CCS
–
0.2 V
CE2 = 0.2 V
0.4
V
Output High Voltage
2
V
Standby Current (CMOS)
70
μA
Deep Power-down Standby
5
μA
V
IL
Input Low Voltage
–
0.3
(Note 1)
0.4
V
V
IH
Input High Voltage
2.4
V
CC
+
0.3
(Note 2)
V
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