參數(shù)資料
型號(hào): AM49DL324BGB70T
廠商: ADVANCED MICRO DEVICES INC
元件分類: 存儲(chǔ)器
英文描述: 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit)
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA73
封裝: 8 X 11.60 MM, PLASTIC, FBGA-73
文件頁(yè)數(shù): 61/64頁(yè)
文件大?。?/td> 571K
代理商: AM49DL324BGB70T
60
Am49DL32xBG
July 19, 2002
P R E L I M I N A R Y
pSRAM DATA RETENTION
Notes:
1. CE1#s
V
CC
0.2 V, CE2s
V
CC
0.2 V (CE1#s controlled) or CE2s
0.2 V (CE2s controlled).
2. Typical values are not 100% tested.
pSRAM POWER ON AND DEEP POWER DOWN
Figure 33.
Deep Power-down Timing
Note:
Data cannot be retained during deep power-down standby mode.
Figure 34.
Power-on Timing
Parameter
Symbol
Parameter Description
Test Setup
Min
Typ
Max
Unit
V
DR
V
CC
for Data Retention
CS1#s
V
CC
0.2 V (Note 1)
V
CC
= 3.0 V, CE1#s
V
CC
0.2 V
(Note 1)
2.7
3.3
V
I
DR
Data Retention Current
1.0
(Note 2)
70
μA
t
CS
t
CH
t
DPD
t
CHC
t
CHP
CE2 Setup Time
0
ns
CE2 Hold Time
300
μs
CE2 Pulse Width
10
ms
CE2 Hold from CE#1
0
ns
CE2 Hold from Power On
30
μs
CE#1
CE#2
t
DPD
t
CH
tcs
CE#1
V
DD
CE#2
t
CHC
t
CHP
t
CH
V
DD min
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