參數(shù)資料
型號: AM49DL324BGB70T
廠商: ADVANCED MICRO DEVICES INC
元件分類: 存儲器
英文描述: 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit)
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA73
封裝: 8 X 11.60 MM, PLASTIC, FBGA-73
文件頁數(shù): 59/64頁
文件大?。?/td> 571K
代理商: AM49DL324BGB70T
58
Am49DL32xBG
July 19, 2002
P R E L I M I N A R Y
pSRAM AC CHARACTERISTICS
Notes:
1. If the device is using the I/Os to output data, input signals of reverse polarity must not be applied.
2. If OE# is high during the write cycle, the outputs will remain at high impedance.
Figure 32.
Pseudo SRAM Write Cycle
UB#s and LB#s Control
t
WC
Valid Data In
Addresses
A0 to A20
WE#
CE#1
CE2
UB#, LB#
D
IN
I/O1 to 16
D
OUT
I/O1 to 16
t
DS
t
WR
t
WP
t
CW
High-Z
High-Z
t
CH
t
DH
t
AS
t
BW
t
BE
t
COE
t
ODW
(Note 1)
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