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參數(shù)資料
| 型號(hào)： | AM29PDL310G83WSIN |
| 廠商： | Spansion Inc. |
| 英文描述： | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| 中文描述： | 64兆位（4個(gè)M x 16位），3.0伏的CMOS只，同步讀/寫閃存與增強(qiáng)VersatileIO控制記憶 |
| 文件頁(yè)數(shù)： | 59/61頁(yè) |
| 文件大?。?/td> | 1653K |
| 代理商： | AM29PDL310G83WSIN |
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58
Am29PDL640G
February 26, 2003
P R E L I M I N A R Y
REVISION SUMMARY
July 12, 2002
Initial release.
Revision A+1 (July 29, 2002)
Global
Changed all references to DPB to DYB
Table 7. Autoselect Codes (High Voltage Method)
Changed the A5 to A4 and A3 Sector Protection Verifi-
cation fields from L to H.
Table 9. Sector Protection Schemes
Added field: Unprotected-PPB not changeable, DYB is
changeable.
Figure 1. In-System Sector Protection/Sector
Unprotection Algorithms
Added Note
Table 14. Memory Array Command Definitions (x32
Mode)
Added SecSi Sector Factory Protect and Sector Group
Protect Verify fields to tables.
Added Notes 8 and 9
Table 15. Sector Protection Command Definitions
(x32 mode)
Changed variables in Cycle field for Password Pro-
gram (from 5 to 4), PPMLB Status (from 6 to 4), and
SPMLB Status (from 6 to 4).
DC Characteristics
Removed I
ACC
parameter from CMOS Compatable ta-
ble.
Changed specific references from ACC to WP#/ACC.
FBGA Ball Capacitance
Changed table from TSOP Pin Capacitance to FBGA
Ball Capacitance and modified values within table to
reflect change.
CFI
Modified end of last paragraph to “reading array data”
Special Package Handling Instructions
Modified wording to include molded packages (TSOP,
BGA, PLCC, PDIP, SSOP).
Revision A+2 (September 30, 2002)
Distinctive Characteristics and General
Description
Removed the 64-ball Fortified BGA from Package op-
tions.
Connection Diagram
Added Note.
Removed the 64-ball Fortified BGA connection dia-
gram.
Ordering Information
Removed the Extended temperature range.
Removed the PC package type.
Table 1. Am29PDL640G Device Bus Operations and
Standby Mode
Changed
V
CC
±
0.3 V to V
IO
±
0.3 V.
Table 14. Memory Array Command Definitions
Deleted Configuration Register Verify and Write from
table.
Deleted Note #15.
Table 15. Sector Protection Command Definitions
Changed All PPB Erase address from WP to EP.
Added “EP = PPB Erase Address (A6:A0) is (1111010)
(Note 16)” to legend.
Added “the EP address is 01000010” to note #16.
Operating Ranges
Removed the Extended temperature range.
CMOS Compatible
Changed V
CC
to V
IO
in I
CC3
and I
CC5
Test Conditions.
Changed Typical from 0.2 to 1 in I
CC3
, I
CC4
, and I
CC5
Parameters.
Added Min and/or Max to V
IL
, V
IH
, V
OL
, and V
OH
.
Revision B (January 14, 2003)
Distinctive Characteristics, Product Selector
Guide, and Ordering Information
Added 65 ns speed grade.
Customer Lockable: SecSi Sector NOT
Programmed or Protected at the factory.
Added second bullet, SecSi sector-protect verify text
and figure 3.
Command Definitions
Modified last sentence of the first paragraph to state
that writing a wrong address will return the device to
an unknown state and that a reset command is re-
quired to return the device to reading array data.
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