參數(shù)資料
型號(hào): Am29PDL128G80
廠商: Spansion Inc.
英文描述: 128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIO Control
中文描述: 128兆位(8米× 16位/ 4米× 32位),3.0伏的CMOS只,同步讀/寫(xiě)閃存與VersatileIO控制記憶
文件頁(yè)數(shù): 69/69頁(yè)
文件大?。?/td> 1181K
代理商: AM29PDL128G80
68
Am29PDL128G
July 29, 2002
P R E L I M I N A R Y
Table 9. Sector Protection Schemes
Added field: Unprotected-PPB not changeable, DYB is
changable.
Figure 1. In-System Sector Protection/Sector
Unprotection Algorithms
Added Note
Table 14. Memory Array Command Definitions (x32
Mode)
Table 16. Memory Array Command Definitions (x16
Mode)
Added SecSi Sector Factory Protect and Sector Group
Protect Verify fields to tables.
Added Notes 8 and 9
Changed the Autoselect Sector Group Protect Verify
command variable from SA(3A) to SA02.
Table 15. Sector Protection Command Definitions
(x32 mode)
Table 17. Sector Protection Comamnd Definitions
(x16 mode)
Changed variables in Cycle field for Password Pro-
gram (from 5 to 4), PPMLB Status (from 6 to 4), and
SPMLB Status (from 6 to 4).
Added Note 17
FBGA Ball Capacitance
Changed table from BGA Capacitance to Fortified
BGA Capacitance and modified values within table to
TBD.
DC Characteristics
Deleted the I
ACC
specification row.
Special Package Handling Instructions
Changed the instructions to include molded packages
(TSOP, BGA, PLCC, PDIP, SSOP).
CFI
Modified wording of last paragraph to read
reading
array data
.
Trademarks
Copyright 2002 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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