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參數(shù)資料
| 型號： | Am29PDL128G70R |
| 廠商： | Spansion Inc. |
| 英文描述： | 128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIO Control |
| 中文描述： | 128兆位（8米× 16位/ 4米× 32位），3.0伏的CMOS只，同步讀/寫閃存與VersatileIO控制記憶 |
| 文件頁數(shù)： | 3/69頁 |
| 文件大?。?/td> | 1181K |
| 代理商： | AM29PDL128G70R |
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Am29PDL128G
July 29, 2002
P R E L I M I N A R Y
GENERAL DESCRIPTION
The Am29PDL128G is a 128 Mbit, 3.0 volt-only Page Mode
and Simultaneous Read/Write Flash memory device orga-
nized as 8 Mwords or 4 M double words (One word is equal
to two bytes). The device is offered in an 80-ball Fortified
BGA package. The word-wide data (x16) appears on
DQ15-DQ0; the double word mode data (x32) appears on
DQ31-DQ0. This device can be programmed in-system or in
standard EPROM programmers. A 12.0 V V
PP
is not re-
quired for write or erase operations.
The device offers fast page access times of 25 and 30 ns,
with corresponding random access times of 70 and 80 ns,
respectively, allowing high speed microprocessors to oper-
ate without wait states. To eliminate bus contention the de-
vice has separate chip enable (CE#), write enable (WE#)
and output enable (OE#) controls.
Simultaneous Read/Write Operation with
Zero Latency
The Simultaneous Read/Write architecture provides
simul-
taneous operation
by dividing the memory space into 4
banks, which can be considered to be four separate memory
arrays as far as certain operations are concerned. The de-
vice can improve overall system performance by allowing a
host system to program or erase in one bank, then immedi-
ately and simultaneously read from another bank with zero
latency (with 2 simultaneous operations operating at any
one time). This releases the system from waiting for the
completion of a program or erase operation, greatly improv-
ing system performance.
The device can be organized in both top and bottom sector
configurations (see
Table 1
).
Bank/Sector Sizes
Page Mode Features
The device is AC timing, input/output, and package
compat-
ible with 8 Mbit x16 page mode mask ROM
. The page size
is 8 words or 4 double words.
After initial page access is accomplished, the page mode op-
eration provides fast read access speed of random locations
within that page.
Standard Flash Memory Features
The device requires a
single 3.0 volt power supply
(2.7 V
to 3.6 V) for both read and write functions. Internally gener-
ated and regulated voltages are provided for the program
and erase operations.
The device is entirely command set compatible with the
JEDEC 42.4 single-power-supply Flash standard
. Com-
mands are written to the command register using standard
microprocessor write timing. Register contents serve as in-
puts to an internal state-machine that controls the erase and
programming circuitry. Write cycles also internally latch ad-
dresses and data needed for the programming and erase
operations. Reading data out of the device is similar to read-
ing from other Flash or EPROM devices.
Device programming occurs by executing the program com-
mand sequence. The Unlock Bypass mode facilitates faster
programming times by requiring only two write cycles to pro-
gram data instead of four. Device erasure occurs by execut-
ing the erase command sequence.
The host system can detect whether a program or erase op-
eration is complete by reading the DQ7 (Data# Polling) and
DQ6 (toggle)
status bits
. After a program or erase cycle has
been completed, the device is ready to read array data or
accept another command.
The sector erase architecture allows memory sectors to be
erased and reprogrammed without affecting the data con-
tents of other sectors. The device is fully erased when
shipped from the factory.
Hardware data protection
measures include a low V
CC
de-
tector that automatically inhibits write operations during
power transitions. The hardware sector protection feature
disables both program and erase operations in any combi-
nation of sectors of memory. This can be achieved in-system
or via programming equipment.
The Erase Suspend/Erase Resume
feature enables the
user to put erase on hold for any period of time to read data
from, or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved. If a
read is needed from the SecSi Sector area (One Time Pro-
gram area) after an erase suspend, then the user must use
the proper command sequence to enter and exit this region.
The device offers two power-saving features. When ad-
dresses have been stable for a specified amount of time, the
device enters the
automatic sleep mode
. The system can
also place the device into the standby mode. Power con-
sumption is greatly reduced in both these modes.
AMD
’
s Flash technology combined years of Flash memory
manufacturing experience to produce the highest levels of
quality, reliability and cost effectiveness. The device electri-
cally erases all bits within a sector simultaneously via
Fowler-Nordheim tunneling. The data is programmed using
hot electron injection.
Bank
Number of
Sectors
8
31
96
96
8
31
Sector Size
(Word/Dbl.
Word)
4/2
32/16
32/16
32/16
4/2
32/16
Bank Size
1
16 Mbit
2
3
48 Mbit
48 Mbit
4
16 Mbit
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