- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366521 > Am29LV800T-120 (Advanced Micro Devices, Inc.) 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | Am29LV800T-120 |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
| 中文描述： | 8兆位（1,048,576 x 8-Bit/524，288 x 16位），3.0伏的CMOS只，扇區(qū)閃存 |
| 文件頁(yè)數(shù)： | 40/48頁(yè) |
| 文件大小： | 207K |
| 代理商： | AM29LV800T-120 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)當(dāng)前第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)
40
Am29LV800T/Am29LV800B
P R E L I M I N A R Y
AC CHARACTERISTICS
Write (Erase/Program) Operations
Alternate CE Controlled Writes
Notes:
1. The duration of the program or erase operation is variable and is calculated in the internal algorithms.
2. Does not include the preprogramming time.
3. Not 100% tested.
Parameter Symbols
-90R
-100
-120
-150
JEDEC
Standard
Description
Unit
t
AVAV
t
WC
Write Cycle Time (Note 2)
Min
90
100
120
150
ns
t
AVWL
t
AS
Address Setup Time
Min
0
0
0
0
ns
t
ELAX
t
AH
Address Hold Time
Min
50
50
50
65
ns
t
DVEH
t
DS
Data Setup Time
Min
50
50
50
65
ns
t
EHDX
t
DH
Data Hold Time
Min
0
0
0
0
ns
t
OES
Output Enable Setup Time
Min
0
0
0
0
ns
t
OEH
Output Enable
Hold TIme
Read (Note 2)
Min
0
0
0
0
ns
Toggle and Data Polling
(Note 2)
Min
10
10
10
10
ns
t
GHEL
t
GHEL
Read Recovery TIme Before Write
(OE High to WE Low)
Min
0
0
0
0
ns
t
WLEL
t
WS
WE Setup TIme
Min
0
0
0
0
ns
t
EHWH
t
WH
WE Hold TIme
Min
0
0
0
0
ns
t
ELEH
t
CP
CE Pulse Width
Min
50
50
50
65
ns
t
EHEL
t
CPH
CE Pulse Width High
Min
30
30
30
35
ns
t
WHWH1
t
WHWH1
Programming Operation
Byte
Typ
9
9
9
9
μ
s
Word
Typ
11
11
11
11
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 1)
Typ
1
1
1
1
sec
t
FLQZ
BYTE Switching Low to Output HIGH Z
(Note 2)
Min
30
30
30
30
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Am29LV800T-150 | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
| Am29LV800T-90R | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
| AM29LV800T | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
| Am29LV800T-100 | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
| AM29LV800BB-120WBK | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV800T-120DGC1 | 制造商:Spansion 功能描述:3V 8M FLASH KNWON GOOD DIE W/TOP BOOT (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29PDL128G70RPEI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 8MX16/4M X 32 70NS 80FBGA - Trays |
| AM29PDL128G80PEF | 制造商:Spansion 功能描述:SPZAM29PDL128G80PEF 128M FLASH EOL100409 |
| AM29PL141BXA | 制造商:AMD 功能描述:* |
| AM29PL141DC | 制造商:Advanced Micro Devices 功能描述:USER PROGRAMMABLE SPECIAL FUNCTION ASIC, 28 Pin, DIP |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。