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參數(shù)資料
| 型號： | Am29LV800T-120 |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
| 中文描述： | 8兆位（1,048,576 x 8-Bit/524，288 x 16位），3.0伏的CMOS只，扇區(qū)閃存 |
| 文件頁數(shù)： | 32/48頁 |
| 文件大?。?/td> | 207K |
| 代理商： | AM29LV800T-120 |
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32
Am29LV800T/Am29LV800B
P R E L I M I N A R Y
AC CHARACTERISTICS
Read-Only Operations Characteristics
Notes:
1. Test Conditions
Input Rise and Fall Times: 5 ns
Input Pulse Levels: 0.0 V to 3.0 V
Timing Measurement Reference Level:
Input: 1.5 V
Output: 1.5 V
2. Output Driver Disable Time
3. Not 100% tested.
Parameter Symbols
Speed Option (Note 1)
JEDEC
Standard
Description
Test Setup
-90R
-100
-120
-150
Unit
t
AVAV
t
RC
Read Cycle Time (Note 3)
Min
90
100
120
150
ns
t
AVQV
t
ACC
Address to Output Delay
CE = V
IL
OE = V
IL
Max
90
100
120
150
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE = V
IL
Max
90
100
120
150
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max
40
40
50
55
ns
t
EHQZ
t
DF
Chip Enable to Output High Z (Notes 2, 3)
Max
30
30
30
40
ns
t
GHQZ
t
DF
Output Enable to Output High Z (Notes 2, 3)
Max
30
30
30
40
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE or
OE, Whichever Occurs First (Note 3)
Min
0
0
0
0
ns
t
Ready
RESET Pin Low to Read Mode (Note 3)
Max
20
20
20
20
μ
s
2.7 k
IN3064 or Equivalent
C
L
6.2 k
3.3 V
IN3064
or Equivalent
Device
Under
Test
IN3064 or Equivalent
IN3064 or Equivalent
Notes:
C
L
= 30 pF for 90 and 100 ns
C
L
= 100 pF for 120 and 150 ns
20478D-15
Figure 14.
Test Conditions
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| Am29LV800T-150 | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
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| Am29LV800T-100 | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
| AM29LV800BB-120WBK | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
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