參數(shù)資料
型號(hào)： Am29LV800T-100
廠商： Advanced Micro Devices, Inc.
英文描述： 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory
中文描述： 8兆位（1,048,576 x 8-Bit/524，288 x 16位），3.0伏的CMOS只，扇區(qū)閃存
文件頁(yè)數(shù)： 23/48頁(yè)
文件大?。?/td> 207K
代理商： AM29LV800T-100
Am29LV800T/Am29LV800B
23
P R E L I M I N A R Y
Data Protection
The Am29LV800 is designed to offer protection against
accidental erasure or programming caused by spurious
system level signals that may exist during power transi-
tions. During power-up, the device automatically resets
the internal state machine to the read mode. Also, with
its control register architecture, alteration of the mem-
ory contents only occurs after successful completion of
the command sequences.
The Am29LV800 incorporates several features to pre-
vent inadvertent write cycles resulting from V
CC
power-up and power-down transitions or system noise.
Low V
CC
Write Inhibit
To avoid initiation of a write cycle during V
CC
power-up
and power-down, a write cycle is locked out for V
CC
less than V
LKO
(lock-out voltage). If V
CC
< V
LKO
, the
command register is disabled and all internal program/
erase circuits are disabled. Under this condition, the
device will reset to read mode. Subsequent writes will
be ignored until the V
CC
level is greater than V
LKO
. It is
the user’s responsibility to ensure that the control levels
are logically correct when V
CC
is above V
LKO
(unless
the RESET pin is asserted).
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE, CE, or
WE will not change the command registers.
Logical Inhibit
Writing is inhibited by holding any one of OE = V
IL
, CE
= V
IH
, or WE = V
IH
. To initiate a write, CE and WE must
be logical zero while OE is a logical one.
Power-Up Write Inhibit
Power up of the device with WE = CE = V
IL
and OE =
V
IH
will not accept commands on the rising edge of WE.
The internal state machine is automatically reset to
read mode on power up.
相關(guān)PDF資料
PDF描述
AM29LV800BB-120WBK 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV800BB-120ED 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV800BB-120EF 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV800BB-120EK 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV800BB-120FD 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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