參數(shù)資料
型號(hào)： Am29LV800T-100
廠商： Advanced Micro Devices, Inc.
英文描述： 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory
中文描述： 8兆位（1,048,576 x 8-Bit/524，288 x 16位），3.0伏的CMOS只，扇區(qū)閃存
文件頁數(shù)： 20/48頁
文件大小： 207K
代理商： AM29LV800T-100
20
Am29LV800T/Am29LV800B
P R E L I M I N A R Y
indicate a logic ‘1’ at the DQ2 bit. Note that a sector
which is selected for erase is not available for read in
Erase Suspend mode. Other sectors which are not se-
lected for Erase can be read in Erase Suspend.
DQ6 is different from DQ2 in that DQ6 toggles only
when the standard program or erase, or erase
suspend-program operation is in progress.
If the DQ5 failure condition is observed while in Sector
Erase mode (that is, exceeded timing limits), the DQ2
toggle bit can give extra information. In this case, the
normal function of DQ2 is modified. If DQ5 is at logic
‘1’, then DQ2 will toggle with consecutive reads only at
the sector address that caused the failure condition.
DQ2 will toggle at the sector address where the failure
occurred and will not toggle at other sector addresses.
RY/BY: Ready/Busy Pin
The Am29LV800 provides a RY/BY open-drain output
pin as a way to indicate to the host system that the
Embedded Algorithms are either in progress or have
been completed. If the output is low, the device is busy
with either a program or erase operation. If the output
is high, the device is ready to accept any read/write or
erase operation. When the RY/BY pin is low, the de-
vice will not accept any additional program or erase
commands with the exception of the Erase Suspend
command. If the Am29LV800 is placed in an Erase
Suspend mode, the RY/BY output will be high. For
programming, the RY/BY is valid (RY/BY=0) after the
rising edge of the fourth WE pulse in the four write
pulse sequence. For chip erase, the RY/BY is valid
after the rising edge of the sixth WE pulse in the six
write pulse sequence. For sector erase, the RY/BY is
also valid after the rising edge of the sixth WE pulse.
Since the RY/BY pin is an open-drain output, several
RY/BY pins can be tied together in parallel with a
pull-up resistor to V
CC
.
Table 8.
Toggle Bit Status
Notes:
1. These status flags apply when outputs are read from a sector that has been erase suspended.
2. These status flags apply when outputs are read from the byte/word addresses of the non-erase suspended sector.
Mode
DQ7
DQ6
DQ2
Program
DQ7
Toggles
1
Erase
0
Toggles
Toggles
Erase-Suspend Read (Note 1) (Erase-Suspended Sector)
1
1
Toggles
Erase Suspend Program
DQ7 (Note 2)
Toggles
1 (Note 2)
CE
RY/BY
WE
LAST_BUS_CYCLE
t
BUSY
20478D-9
Figure 2.
RY/BY Timing Diagram
相關(guān)PDF資料
PDF描述
AM29LV800BB-120WBK 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV800BB-120ED 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV800BB-120EF 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV800BB-120EK 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV800BB-120FD 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV800T-120DGC1 制造商:Spansion 功能描述:3V 8M FLASH KNWON GOOD DIE W/TOP BOOT (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film
AM29PDL128G70RPEI 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 8MX16/4M X 32 70NS 80FBGA - Trays
AM29PDL128G80PEF 制造商:Spansion 功能描述:SPZAM29PDL128G80PEF 128M FLASH EOL100409
AM29PL141BXA 制造商:AMD 功能描述:*
AM29PL141DC 制造商:Advanced Micro Devices 功能描述:USER PROGRAMMABLE SPECIAL FUNCTION ASIC, 28 Pin, DIP
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*