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參數(shù)資料
| 型號： | AM29LV800BT120EEB |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 512K X 16 FLASH 3V PROM, 120 ns, PDSO48 |
| 封裝： | MO-142DD, TSOP-48 |
| 文件頁數(shù)： | 42/42頁 |
| 文件大小： | 569K |
| 代理商： | AM29LV800BT120EEB |
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42
Am29LV800B
P R E L I M I N A R Y
REVISION SUMMARY FOR AM29LV800B
Revision E
Distinctive Characteristics
Changed typical read and program/erase current spec-
ifications.
Device now has a guaranteed minimum endurance of
1,000,000 write cycles.
Figure 1, In-System Sector Protect/Unprotect
Algorithm
Corrected A6 to 0, Changed wait specification to 150
μ
s on sector protect and 15 ms on sector unprotect.
DC Characteristics
Changed typical read and program/erase current spec-
ifications.
AC Characteristics
Alternate CE# Controlled Erase/Program Operations:
Changed t
CP
to 35 ns for 70R, 80, and 90 speed
options.
Erase and Programming Performance
Device now has a guaranteed minimum endurance of
1,000,000 write cycles.
Physical Dimensions
Corrected dimensions for package length and width in
FBGA illustration (standalone data sheet version).
Revision E+1
Figure 2, In-System Sector Protect/Unprotect
Algorithms
In the sector protect algorithm, added a “Reset
PLSCNT=1” box in the path from “Protect another sec-
tor” back to setting up the next sector address.
DC Characteristics
Changed Note 1 to indicate that OE# is at V
IH
for the
listed current.
AC Characteristics
Erase/Program Operations; Alternate CE# Controlled
Erase/Program Operations:
Corrected the notes refer-
ence for t
WHWH1
and t
WHWH2
. These parameters are
100% tested. Corrected the note reference for t
VCS
.
This parameter is not 100% tested.
Temporary Sector Unprotect Table
Added note reference for t
VIDR
. This parameter is not
100% tested.
Figure 23, Sector Protect/Unprotect Timing
Diagram
A valid address is not required for the first write cycle;
only the data 60h.
Erase and Programming Performance
In Note 2, the worst case endurance is now 1 million cy-
cles.
Trademarks
Copyright 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV800BT120EI | RP10 (EW) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 12V; 4:1 Wide Input Voltage Range; 10 Watts Output Power; 1.6kVDC Isolation; Fixed Operating Frequency; Six-Sided Continuous Shield; Standard 50.8 x25.4x10.2mm Package; Efficiency to 84% |
| AM29LV800BB70RFE | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV800BB70RFI | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| Am29LV800BB70RSCB | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV800BB70RSE | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 15pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV800BT-120EI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV800BT-120SCT | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV800BT-90EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 16, 48 Pin, Plastic, TSSOP 制造商:Analog Devices 功能描述:NOR Flash, 512K x 16, 48 Pin, Plastic, TSSOP |
| AM29LV800DB-70EF | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 70ns 48-Pin TSOP |
| AM29LV800DB-90EC | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 90ns 48-Pin TSOP |
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