參數(shù)資料
型號: AM29LV800BT120EEB
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 512K X 16 FLASH 3V PROM, 120 ns, PDSO48
封裝: MO-142DD, TSOP-48
文件頁數(shù): 26/42頁
文件大小: 569K
代理商: AM29LV800BT120EEB
26
Am29LV800B
P R E L I M I N A R Y
TEST CONDITIONS
Table 7.
Test Specifications
KEY TO SWITCHING WAVEFORMS
2.7 k
C
L
6.2 k
3.3 V
Device
Under
Test
21490E-15
Figure 11.
Test Setup
Note:
Diodes are IN3064 or equivalent
Test Condition
70R,
80
90,
120
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
100
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0–3.0
V
Input timing measurement
reference levels
1.5
V
Output timing measurement
reference levels
1.5
V
KS000010-PAL
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
3.0 V
0.0 V
1.5 V
1.5 V
Output
Measurement Level
Input
21490E-16
Figure 12.
Input Waveforms and Measurement Levels
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