參數(shù)資料
型號: AM29LV641ML101RFI
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 64 Megabit (4 M x 16-Bit) MirrorBita?? 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/Oa?? Control
中文描述: 4M X 16 FLASH 3V PROM, 100 ns, PDSO48
封裝: REVERSE, MO-142BDD, TSOP-48
文件頁數(shù): 54/60頁
文件大?。?/td> 640K
代理商: AM29LV641ML101RFI
52
Am29LV641MH/L
December 21, 2005
D A T A S H E E T
ERASE AND PROGRAMMING PERFORMANCE
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0 V V
CC
. Programming specifications assume that
all bits are programmed to 00h.
2. Maximum values are measured at V
CC
= 3.0 V, worst case temperature. Maximum values are valid up to and including 100,000
program/erase cycles.
3. Word programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
4. For 1-16 words programmed in a single write buffer programming operation.
5. Effective write buffer specification is calculated on a per-word basis for a 16-word write buffer operation.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the command sequence(s) for the program command. See Table
10
for
further information on command definitions.
8. The device has a minimum erase and program cycle endurance of 100,000 cycles.
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V, one pin at a time.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.5
15
sec
Excludes 00h programming prior to
erasure (Note 6)
Chip Erase Time
64
128
sec
Single Word Program Time (Note 3)
100
800
μs
Excludes system level overhead (Note 7)
Accelerated Single Word Program Time
(Note 3)
90
720
μs
Total Write Buffer Program Time
(Note 4)
352
1800
μs
Effective Word Program Time, using the
Write Buffer (Note 5)
22
113
μs
Total Accelerated Write Buffer Program
Time (Note 4)
282
1560
μs
Effective Accelerated Word Program
Time, using the Write Buffer (Note 4)
17.6
98
μs
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
相關PDF資料
PDF描述
AM29LV641MH112REI 64 Megabit (4 M x 16-Bit) MirrorBita?? 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/Oa?? Control
AM29LV641MH112RFI 64 Megabit (4 M x 16-Bit) MirrorBita?? 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/Oa?? Control
AM29LV641MH120EI 64 Megabit (4 M x 16-Bit) MirrorBita?? 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/Oa?? Control
AM29LV641MH120FI 64 Megabit (4 M x 16-Bit) MirrorBita?? 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/Oa?? Control
AM29LV641MH120REI 64 Megabit (4 M x 16-Bit) MirrorBita?? 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/Oa?? Control
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