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參數(shù)資料
| 型號： | AM29LV641ML101RFI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 64 Megabit (4 M x 16-Bit) MirrorBita?? 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/Oa?? Control |
| 中文描述： | 4M X 16 FLASH 3V PROM, 100 ns, PDSO48 |
| 封裝： | REVERSE, MO-142BDD, TSOP-48 |
| 文件頁數(shù)： | 52/60頁 |
| 文件大?。?/td> | 640K |
| 代理商： | AM29LV641ML101RFI |
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50
Am29LV641MH/L
December 21, 2005
D A T A S H E E T
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
3. For 1–16 words programmed.
4. Effective write buffer specification is based upon a 16-word write buffer operation.
5. Word programming specification is based upon a single word programming operation not utilizing the write buffer.
6. AC Specifications listed are tested with V
IO
= V
CC
. Contact AMD for information on AC operation with V
IO
≠
V
CC
.
7. When using the program suspend/resume feature, if the suspend command is issued within t
POLL
, t
POLL
must be fully
re-applied upon resuming the programming operation. If the suspend command is issued after t
POLL
, t
POLL
is not required
again prior to reading the status bits upon resuming.
Parameter
Speed Options
JEDEC
Std.
Description
90R
101,
101R
112,
112R
120,
120R
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
90
100
110
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
45
ns
t
DVEH
t
DS
Data Setup Time
Min
45
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
45
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
352
μs
Effective Word Program Time, using the Write
Buffer (Notes 2, 4)
Typ
22
μs
Effective Accelerated Word Program Time, using
the Write Buffer (Notes 2, 4)
Typ
17.6
μs
Single Word Program Operation (Note 2, 5)
Typ
100
μs
Accelerated Single Word Programming Operation
(Note 2, 5)
Typ
90
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
t
RH
Reset High Time Before Write (Note 1)
Min
50
ns
t
POLL
Program Valid Before Status Polling (Note 7)
Max
4
μs
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV641MH112REI | 64 Megabit (4 M x 16-Bit) MirrorBita?? 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/Oa?? Control |
| AM29LV641MH112RFI | 64 Megabit (4 M x 16-Bit) MirrorBita?? 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/Oa?? Control |
| AM29LV641MH120EI | 64 Megabit (4 M x 16-Bit) MirrorBita?? 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/Oa?? Control |
| AM29LV641MH120FI | 64 Megabit (4 M x 16-Bit) MirrorBita?? 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/Oa?? Control |
| AM29LV641MH120REI | 64 Megabit (4 M x 16-Bit) MirrorBita?? 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/Oa?? Control |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV641ML112REI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV641ML120REI | 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 64M-Bit 4M x 16 120ns 48-Pin TSOP |
| AM29LV800B-120DGC1 | 制造商:Spansion 功能描述:3V 8M FLASH KNOWN GOOD DIE W/BOTTOM BOOT (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29LV800BB | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV800BB120EC | 制造商:AMD 功能描述:* |
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