參數(shù)資料
型號(hào): AM29LV320MB100E
廠商: Advanced Micro Devices, Inc.
英文描述: 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
中文描述: 32兆位(2米× 16位/ 4米× 8位)的MirrorBit 3.0伏,只引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù): 52/61頁(yè)
文件大?。?/td> 1395K
代理商: AM29LV320MB100E
52
Am29LV320MT/B
May 16, 2003
D A T A S H E E T
AC CHARACTERISTICS
t
GHEL
t
WS
OE#
CE#
WE#
RESET#
t
DS
Data
t
AH
Addresses
t
DH
t
CP
DQ7#
D
OUT
t
WC
t
AS
t
CPH
PA
Data# Polling
A0 for program
55 for erase
t
RH
t
WHWH1 or 2
RY/BY#
t
WH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
t
BUSY
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. D
OUT
is the data written to the device.
4. Waveforms are for the word mode.
Figure 25.
Alternate CE# Controlled Write (Erase/Program)
Operation Timings
相關(guān)PDF資料
PDF描述
AM29LV320MB100EI 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
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AM29LV320MT100PCI CAP 0.1UF 50V 50V X7R RAD.20 .20X.20 BULK P-MIL-PRF-39014 STANDOFF
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