參數(shù)資料
型號: AM29LV320MB100E
廠商: Advanced Micro Devices, Inc.
英文描述: 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
中文描述: 32兆位(2米× 16位/ 4米× 8位)的MirrorBit 3.0伏,只引導(dǎo)扇區(qū)閃存
文件頁數(shù): 23/61頁
文件大?。?/td> 1395K
代理商: AM29LV320MB100E
May 16, 2003
Am29LV320MT/B
23
D A T A S H E E T
Table 10.
Device Geometry Definition
Addresses
(x16)
Addresses
(x8)
Data
Description
27h
4Eh
0016h
Device Size = 2
N
byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0005h
0000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
58h
0002h
Number of Erase Block Regions within device (01h = uniform device, 02h = boot
device)
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
007Fh
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
003Eh
0000h
0000h
0001h
Erase Block Region 2 Information (refer to CFI publication 100)
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information (refer to CFI publication 100)
相關(guān)PDF資料
PDF描述
AM29LV320MB100EI 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
AM29LV320MT100PC CAP 0.047UF 50V 50V X7R RAD.20 .20X.20 BULK P-MIL-PRF-39014
AM29LV320MT100PCI CAP 0.1UF 50V 50V X7R RAD.20 .20X.20 BULK P-MIL-PRF-39014 STANDOFF
AM29LV320MT100RE CAP 2200PF 100V 100V X7R RAD.20 .20X.20 BULK R-MIL-PRF-39014
AM29LV320MT90RPC 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
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