參數(shù)資料
型號(hào): AM29LV002BB-120ED
廠商: Advanced Micro Devices, Inc.
英文描述: 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 2兆位(256畝× 8位)的CMOS 3.0伏,只引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù): 27/41頁(yè)
文件大?。?/td> 416K
代理商: AM29LV002BB-120ED
21520D5 October11,2006
Am29LV002B
25
D AT A S H E E T
TEST CONDITIONS
Table 7.
Test Specifications
KEY TO SWITCHING WAVEFORMS
2.7 k
Ω
C
L
6.2 k
Ω
3.3 V
Device
Under
Test
Figure 11.
Test Setup
Note:
Diodes are IN3064 or equivalent
Test Condition
-55R,
-70,
-90,
-120
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
100
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0–3.0
V
Input timing measurement
reference levels
1.5
V
Output timing measurement
reference levels
1.5
V
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
3.0 V
0.0 V
1.5 V
1.5 V
Output
Measurement Level
Input
Figure 12.
Input Waveforms and Measurement Levels
相關(guān)PDF資料
PDF描述
AM29LV002BB-120EF 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV004BB-70RECB 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BT-70REC 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BB-70REC 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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